A kind of low warpage crystalline silicon solar cell conductive aluminum paste

A technology of solar cells and crystalline silicon, which is applied to conductive materials, circuits, electrical components, etc. dispersed in non-conductive inorganic materials, can solve the problems of poor electrical conductivity of additives, difficulty in dispersing, and affecting the electrical properties of battery sheets, etc., to achieve high Photoelectric conversion efficiency, warpage reduction effect

Active Publication Date: 2018-06-12
JIANGSU HOYI TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these additives also have one or more of the following problems: the additive itself has poor electrical conductivity, which affects the electrical properties of the battery sheet; the composition of the additive is far from that of the aluminum paste, which affects the overall performance of the product; the additive itself has Severe reunion, difficult to disperse and other problems

Method used

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  • A kind of low warpage crystalline silicon solar cell conductive aluminum paste
  • A kind of low warpage crystalline silicon solar cell conductive aluminum paste
  • A kind of low warpage crystalline silicon solar cell conductive aluminum paste

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-6

[0028] The specific ratio of aluminum paste is as follows:

[0029]

[0030] The components of the organic carrier are: 30 parts of terpineol, 30 parts of diethylene glycol butyl ether, 30 parts of lauryl alcohol ester, 6 parts of ethyl cellulose, and 4 parts of acrylate resin; the components of the inorganic adhesive It is: 55 parts of bismuth oxide, 10 parts of zinc oxide, 15 parts of antimony oxide, 10 parts of boron oxide, 2.5 parts of molybdenum oxide, 5 parts of aluminum oxide, and 2.5 parts of lithium oxide; the dispersant is monoglycerin stearate of aliphatic esters Esters; doped conductive powder ATO is 50 nm, ITO is 150 nm, FTO is 1.5 μm, WTO is 2 μm, TOA is 1.3 μm.

[0031] The front side silver used in the test is DuPont PV-18H, the back side silver is Hongyuan SS-605, the chip source is 156 mm×156mm polysilicon wafer provided by Jinke, and the sintering temperature is 550°C / 500°C / 560°C / 600°C / 720°C / 930°C, the sintering speed is 230IPM. The polycrystalline...

Embodiment 7-11

[0035] Doped conductive powder is mixed with each other in equal proportion by weight, and the specific proportion of aluminum paste is as follows:

[0036]

[0037] The components of the organic carrier are: 30 parts of ethylene glycol phenyl ether, 30 parts of diethylene glycol butyl ether acetate, 30 parts of dibutyl phthalate, 4 parts of phenolic resin, 4 parts of alkyd resin; The components of the adhesive are: 10 parts of calcium oxide, 35 parts of antimony oxide, 25 parts of boron oxide, 5 parts of zirconia, 10 parts of aluminum oxide, 10 parts of lead oxide, and 5 parts of cerium oxide; Ethylene glycol 400; doped conductive powder ATO is 200 nm, ITO is 150 nm, FTO is 150 nm, WTO is 1 μm, TOA is 1.3 μm.

[0038] The front side silver used in the test is DuPont PV-18H, the back side silver is Hongyuan SS-605, the chip source is 156 mm×156mm polysilicon wafer provided by Jinke, and the sintering temperature is 550°C / 500°C / 560°C / 600°C / 720°C / 930°C, the sintering sp...

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Abstract

The invention discloses efficient low-warpage crystalline silicon solar cell conducive aluminium paste. The conducive aluminium paste comprises the components of aluminium powder, an organic carrier, at least one inorganic binder, and tin oxide doped conductive powder, wherein the tin oxide doped conductive powder is selected from at least one of antimony doped tin oxide (ATO), indium doped tin oxide (ITO), fluorine doped tin oxide (FTO), wolfram doped tin oxide (WTO), or aluminium doped tin oxide (TOA). The doped tin oxide conductive powder is uniformly dispersed in the aluminium paste; the doped tin oxide conductive powder becomes an out-phase stress releasing center in a sintered aluminium conducive layer; the warpage of a cell piece can be reduced; the doped tin oxide conductive powder is good in the conductivity; the doped tin oxide conductive powder is introduced as the out-phase stress releasing center, however, the conductivity of the aluminium conducive layer is not influenced; and the warpage of the silicon-based solar cell piece is reduced, and the photoelectric conversion efficiency of the solar cell is ensued as well.

Description

technical field [0001] The invention relates to the technical field of aluminum paste compositions on the back of crystalline silicon solar energy, in particular to a low-warp conductive aluminum paste for crystalline silicon solar cells containing ultrafine particles doped with tin dioxide. Background technique [0002] In the context of the global energy crisis, solar cells are receiving more and more attention from various countries. The annual growth rate is as high as 40%. In the current production of crystalline silicon solar cells, most of them use the backside of P-type crystalline silicon solar cells to print aluminum paste, which is sintered to form an aluminum back field. After years of development, the production process of aluminum back field has become mature and stable, and the research on aluminum back field has been deepened day by day, all of which determine that aluminum back field will still be widely used in crystalline silicon Solar cell production. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B1/20H01B1/22H01L31/0224
Inventor 陈晓蕾杨贵忠杨波
Owner JIANGSU HOYI TECH
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