A kind of low warpage crystalline silicon solar cell conductive aluminum paste
A technology of solar cells and crystalline silicon, which is applied to conductive materials, circuits, electrical components, etc. dispersed in non-conductive inorganic materials, can solve the problems of poor electrical conductivity of additives, difficulty in dispersing, and affecting the electrical properties of battery sheets, etc., to achieve high Photoelectric conversion efficiency, warpage reduction effect
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Embodiment 1-6
[0028] The specific ratio of aluminum paste is as follows:
[0029]
[0030] The components of the organic carrier are: 30 parts of terpineol, 30 parts of diethylene glycol butyl ether, 30 parts of lauryl alcohol ester, 6 parts of ethyl cellulose, and 4 parts of acrylate resin; the components of the inorganic adhesive It is: 55 parts of bismuth oxide, 10 parts of zinc oxide, 15 parts of antimony oxide, 10 parts of boron oxide, 2.5 parts of molybdenum oxide, 5 parts of aluminum oxide, and 2.5 parts of lithium oxide; the dispersant is monoglycerin stearate of aliphatic esters Esters; doped conductive powder ATO is 50 nm, ITO is 150 nm, FTO is 1.5 μm, WTO is 2 μm, TOA is 1.3 μm.
[0031] The front side silver used in the test is DuPont PV-18H, the back side silver is Hongyuan SS-605, the chip source is 156 mm×156mm polysilicon wafer provided by Jinke, and the sintering temperature is 550°C / 500°C / 560°C / 600°C / 720°C / 930°C, the sintering speed is 230IPM. The polycrystalline...
Embodiment 7-11
[0035] Doped conductive powder is mixed with each other in equal proportion by weight, and the specific proportion of aluminum paste is as follows:
[0036]
[0037] The components of the organic carrier are: 30 parts of ethylene glycol phenyl ether, 30 parts of diethylene glycol butyl ether acetate, 30 parts of dibutyl phthalate, 4 parts of phenolic resin, 4 parts of alkyd resin; The components of the adhesive are: 10 parts of calcium oxide, 35 parts of antimony oxide, 25 parts of boron oxide, 5 parts of zirconia, 10 parts of aluminum oxide, 10 parts of lead oxide, and 5 parts of cerium oxide; Ethylene glycol 400; doped conductive powder ATO is 200 nm, ITO is 150 nm, FTO is 150 nm, WTO is 1 μm, TOA is 1.3 μm.
[0038] The front side silver used in the test is DuPont PV-18H, the back side silver is Hongyuan SS-605, the chip source is 156 mm×156mm polysilicon wafer provided by Jinke, and the sintering temperature is 550°C / 500°C / 560°C / 600°C / 720°C / 930°C, the sintering sp...
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