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Method of forming a semiconductor structure

A semiconductor and patterning technology, applied in the fields of semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems such as the electrical performance and reliability of semiconductor structures need to be improved, and achieve improved reliability, that is, electrical performance, reliability and The effect of electrical performance and quality improvement

Active Publication Date: 2019-07-02
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, the electrical performance and reliability of existing semiconductor structures formed by TSV technology need to be improved

Method used

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  • Method of forming a semiconductor structure
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  • Method of forming a semiconductor structure

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Experimental program
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Embodiment Construction

[0033] It can be seen from the background art that the electrical performance and reliability of the semiconductor structure formed by using the TSV technology in the prior art needs to be improved.

[0034] It has been found through research that the performance of the redistribution layer (RDL, Redistribution Layer) located at the bottom and sidewall surface of the TSV via hole is poor. It is not covered by the rewiring layer, which is an important reason for the poor electrical performance and reliability of the semiconductor structure.

[0035] Conduct research on the formation method of the semiconductor structure, the process steps of forming the semiconductor structure include:

[0036] Please refer to figure 1 , providing a substrate 100, forming a through hole 101 in the substrate 100; forming a metal layer 102 on the surface of the substrate 100, the bottom of the through hole 101 and the sidewall surface; forming an initial photoresist layer 103 by using a spin co...

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Abstract

Provided is a formation method of a semiconductor structure. The formation method includes: a substrate is provided, and a through hole is formed in the substrate; a metal layer is formed on the surface of the substrate, and the bottom and the surfaces of sidewalls of the through hole in a covering manner; a benzocyclobutene layer is formed on the surface of the metal layer; a photoresist film is formed on the surface of the benzocyclobutene layer, and the through hole is sealed by the photoresist film; baking processing of the photoresist film is performed; the patterning of the photoresist film is performed to form a photoresist layer positioned on the through hole; the photoresist layer is regarded as a mask, the benzocyclobutene layer and the metal layer are etched until the surface of the substrate is exposed, and the remaining metal layer is a redistribution layer; and the photoresist layer and the benzocyclobutene layer are removed. According to the formation method, the benzocyclobutene layer is formed on the surface of the metal layer so that the metal layer positioned in the through hole is prevented from being etched, the quality of the formed redistribution layer is improved, and the reliability and electric performance of the semiconductor structure are enhanced.

Description

technical field [0001] The invention relates to the technology in the field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique [0002] With the rapid development of semiconductor manufacturing technology, in order to achieve faster computing speed, larger data storage capacity and more functions of semiconductor devices, semiconductor chips are developing towards higher integration. The higher the integration degree of the semiconductor chip, the smaller the characteristic size (CD: Critical Dimension) of the semiconductor device. [0003] A three-dimensional integrated circuit (IC: Integrated Circuit) is manufactured by using advanced chip stacking technology, which is to stack chips with different functions into an integrated circuit with a three-dimensional structure. Compared with two-dimensional integrated circuits, the stacking technology of three-dimensional integrated circuits can not only shorten t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768
Inventor 何作鹏丁敬秀赵洪波
Owner SEMICON MFG INT (SHANGHAI) CORP