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Double aluminum process

A kind of process and metal layer technology, applied in the direction of electrical components, electrical solid devices, semiconductor/solid device manufacturing, etc., can solve problems such as inability to realize large current channels

Active Publication Date: 2018-06-15
CSMC TECH FAB2 CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] For the existing aluminum-process integrated circuit technology, only one layer of metal adopts thick aluminum technology, so the high-power devices designed in this way cannot realize high-current channels

Method used

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  • Double aluminum process
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Embodiment Construction

[0038] Please refer to figure 1 and Figure 2-5 , is a double aluminum process flow chart and its corresponding schematic diagram of an embodiment.

[0039] The double aluminum process includes:

[0040] Step S110: using a silicon wafer as a substrate, forming a first oxide layer on the substrate.

[0041] In the present embodiment, the size of the silicon wafer 110 is 8 inches, and chemical vapor deposition (CVD, Chemical Vapor Deposition) is used to deposit tetraethyl orthosilicate (TEOS) on the silicon wafer 110, and the thickness is formed by chemical reaction. 700 nm first oxide layer 120 .

[0042] Step S120: forming a first metal layer on the first oxide layer.

[0043] In this embodiment, the first metal layer 130 with a thickness of 800 nm is formed on the first oxide layer 120 by sputtering. Wherein, the first metal layer 130 is aluminum doped with a small amount of copper, and the content of copper in this embodiment is 0.5%.

[0044] It can be understood that...

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Abstract

A double aluminum process, comprising: using a silicon wafer as a substrate, forming a first oxide layer on the substrate; forming a first metal layer on the first oxide layer; forming a first metal layer on the first metal layer an intermetal dielectric layer; etching and filling via holes in the intermetal dielectric layer; forming a second metal layer on the intermetal dielectric layer; forming a passivation layer on the surface of the second metal layer, And expose the pad window; wherein, the material of the first metal layer and the second metal layer is aluminum or aluminum-copper alloy. The present invention can design a large current channel.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to a double aluminum process. Background technique [0002] With the development of integrated circuit technology, high-power devices have more and more stringent requirements on their rated current, which requires continuous new technology to support the ever-increasing product requirements. [0003] For the existing aluminum-process integrated circuit technology, only one layer of metal adopts thick aluminum technology, and the high-power devices designed in this way cannot realize high-current channels. Contents of the invention [0004] Based on this, it is necessary to provide a double-aluminum process capable of realizing a large current channel. [0005] A dual aluminum process comprising: [0006] Using a silicon wafer as a substrate, forming a first oxide layer on the substrate; [0007] forming a first metal layer on the first oxide layer; [0008] forming an intermetal di...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L23/532
Inventor 高永亮
Owner CSMC TECH FAB2 CO LTD