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Data writing method, device and memory

A data writing and data block technology, applied in special data processing applications, input/output to record carrier, memory address/allocation/relocation, etc., can solve the problems of high energy consumption, reduce the service life of NVM, etc., and improve the use of The effect of life, reduced energy consumption of write operations, and reduced number of times

Active Publication Date: 2019-02-19
HUAWEI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, during the working process of NVM, a large number of write operations will not only bring high energy consumption, but also reduce the service life of NVM

Method used

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  • Data writing method, device and memory
  • Data writing method, device and memory
  • Data writing method, device and memory

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Embodiment Construction

[0068] In order to enable those skilled in the art to better understand the technical solutions in the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described The embodiments are only some of the embodiments of the present invention, not all of them.

[0069] The method provided by the embodiment of the present invention can be used to include but not limited to non-volatile memory NVM, for example: flash memory (Flash Memory), PCM (Phase Change Memory, phase change memory), FRAM (Ferroelectric Random Access Memory, ferroelectric memory), etc., are also applicable to other storage devices that perform write operations by rewriting the storage bit state.

[0070] It should be noted that the nonvolatile memory described in the embodiments of the present invention may include: Phase Change Memory (Phas...

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Abstract

The invention discloses a data writing method, device and memory for writing data into a non-volatile storage medium NVM. The method includes: determining the data block to be written from the data blocks to be written The sample data blocks of the data block to be written are respectively compared with the N sample data blocks in the preset sample set; among the N sample data blocks, it is determined that the data block to be written is The sample data block with the highest matching degree of the sample data blocks is used as the target sample data block; and the data block to be written is written into the free address space corresponding to the target sample data block. The method reduces the number of write operations when writing data, and therefore can solve the problems of high energy consumption and reduced service life of the NVM caused by a large number of write operations during data writing.

Description

technical field [0001] The invention relates to the technical field of data storage, in particular to a data writing method, device and memory. Background technique [0002] The characteristic of non-volatile memory NVM (Non-Volatile Memory) is that the content will not be lost when the power is turned off. For example, flash memory (Flash Memory), PCM (Phase Change Memory, phase change memory), FRAM (Ferroelectric Random Access Memory, ferroelectric dielectric memory), etc., these memories can still maintain on-chip information even after power off. At present, Flash is the most widely used non-volatile memory, but its read and write speed is difficult to compare with DRAM (Dynamic Random Access Memory, dynamic random access memory), so it can only replace disk as external memory. Memories such as PCM and FRAM have the characteristics of fast read and write speed, high density, and byte addressing. They are regarded as the next generation of new non-volatile memories and c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F12/02G06F3/06
CPCG06F16/00Y02D10/00
Inventor 沙行勉诸葛晴凤朱冠宇王元钢石亮
Owner HUAWEI TECH CO LTD
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