A light-emitting diode element and its preparation method
A technology of light-emitting diodes and components, which is applied in the direction of electrical components, semiconductor devices, circuits, etc., can solve problems such as delayed light-off, voltage reversal, delayed turn-on or extinguish of semiconductor components, etc., to improve performance consistency, increase uniform current density, Effect of Avoiding Voltage Swing Phenomenon
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Embodiment 1
[0030] See attached figure 1 , the present invention provides a light-emitting diode element, which includes a substrate 10, an N-type semiconductor layer 20, a light-emitting layer 30, and a P-type semiconductor layer 40, wherein there is a barrier between the light-emitting layer 30 and the N-type layer 20 A barrier layer 50 of a miniature n-p-n junction is formed inside the light-emitting diode element, and the doping type of the barrier layer 50 is the same as that of the adjacent N-type semiconductor layer, which is one of Si, Sn, S, Se, and Te; the barrier layer 50 by the doping concentration of 1×10 17 ~5×10 17 cm -3 The low-doped layer 51 and the concentration is greater than 5×10 17 cm -3 Highly doped layers 52 are alternately stacked in sequence, and the concentration of the highly doped layers is preferably 5×10 18 ~5×10 20 cm -3 , the number of stacking is 1~500,. And in order not to affect the uniform effect of the barrier layer 50 on the current density, ...
Embodiment 2
[0035] See attached figure 2 The difference between this embodiment and Embodiment 1 is that when the insertion layer is located between the light-emitting layer 30 and the P-type semiconductor layer 40, in order to avoid damage to the light-emitting layer 30 by this layer, a lower growth temperature is used for this layer. That is, about 700~1000°C, and because this layer is located on the light-emitting layer 30, the quality of the crystal grown by it is poor, and crystal defects such as N vacancies are more likely to exist at this time, which makes the insertion layer weak n-type, resulting in non- Expected p-n-p junction, this phenomenon also causes the unfavorable consequence described in embodiment 1, so use p-type doping concentration to be 1×10 in the present embodiment 17 ~5×10 17 cm -3 The low-doped layer 51' with a concentration of 5×10 18 ~5×10 20 cm -3 Highly doped layers 52' are alternately stacked to form barrier layers 50' instead of conventional inserti...
Embodiment 3
[0037] See attached image 3 The difference between this embodiment and Embodiments 1 and 2 is that the barrier layers 50 and 50' are respectively located on both sides of the light emitting layer 30 (that is, the barrier layer 50 between the N-type semiconductor layer and the light-emitting layer, the P-type semiconductor layer and the barrier layer 50' between the light-emitting layer). Wherein, the doping impurity of the barrier layer 50 is one of Si, Sn, S, Se, Te, and the doping impurity of the barrier layer 50' is one of Be, Mg, Zn, Cd, C. The number of alternate stacking times of the low-doped layers 51, 51' and the highly-doped layers 52, 52' is 1-500. According to actual production requirements, the number of stacking times can be flexibly selected to obtain light-emitting diode elements with excellent performance.
[0038] Use a concentration of 1×10 17 ~5×10 17 cm -3 The low-doped layers 51, 51' with a concentration of 5×10 18 ~5×10 20 cm -3 Highly doped laye...
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