Light emitting diode element and production method thereof
A technology of light-emitting diodes and components, which is applied in the direction of electrical components, semiconductor devices, circuits, etc., can solve problems such as voltage reversal, delayed turn-on or extinguishment of semiconductor components, and delayed light-off, so as to improve performance consistency, increase uniform current density, Effect of Avoiding Voltage Swing Phenomenon
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Embodiment 1
[0030] See attached figure 1 , The present invention provides a light-emitting diode element, which includes a substrate 10, an N-type semiconductor layer 20, a light-emitting layer 30 and a P-type semiconductor layer 40, wherein there is a avoidance between the light-emitting layer 30 and the N-type layer 20 A barrier layer 50 of a miniature npn junction is formed inside the light-emitting diode element, and the barrier layer 50 has the same doping type as the adjacent N-type semiconductor layer, and is one of Si, Sn, S, Se, and Te; the barrier layer 50 by the doping concentration of 1×10 17 ~5×10 17 cm -3 The low-doped layer 51 and the concentration is greater than 5×10 17 cm -3 The highly doped layers 52 are stacked alternately in turn, and the concentration of the highly doped layers is preferably 5×10 18 ~5×10 20 cm -3 , The number of stacking is 1~500. And in order not to affect the uniform effect of the barrier layer 50 on the current density, the doping concentration of ...
Embodiment 2
[0035] See attached figure 2 The difference between this embodiment and Embodiment 1 is that when the above-mentioned insertion layer is located between the light-emitting layer 30 and the P-type semiconductor layer 40, in order to avoid damage to the light-emitting layer 30 by this layer, the layer adopts a lower growth temperature. That is, about 700~1000°C, and because this layer is located on the light-emitting layer 30, the quality of its grown crystals is poor. At this time, crystal defects such as N vacancies are more likely to exist. This defect makes the insertion layer appear weakly n-type, resulting in non- The pnp junction is expected. This phenomenon also leads to the unfavorable consequences described in Example 1. Therefore, the P-type doping concentration is 1×10 in this example. 17 ~5×10 17 cm -3 The low-doped layer 51’ with a concentration of 5×10 18 ~5×10 20 cm -3 The highly doped layers 52' are alternately stacked to form a barrier layer 50' to replace the co...
Embodiment 3
[0037] See attached image 3 The difference between this embodiment and Embodiments 1 and 2 is that the barrier layers 50 and 50' are respectively located on both sides of the light-emitting layer 30 (that is, the barrier layer 50 between the N-type semiconductor layer and the light-emitting layer, the P-type semiconductor layer And the barrier layer 50' between the light-emitting layer). The doping impurity of the barrier layer 50 is one of Si, Sn, S, Se, and Te, and the doping impurity of the barrier layer 50' is one of Be, Mg, Zn, Cd, and C. The number of alternate stacking of the low-doped layers 51, 51' and the high-doped layers 52, 52' is 1 to 500. According to actual production requirements, the stacking times can be flexibly selected to obtain a light-emitting diode element with excellent performance.
[0038] Utilization concentration is 1×10 17 ~5×10 17 cm -3 The low-doped layers 51, 51’ with a concentration of 5×10 18 ~5×10 20 cm -3 The highly doped layers 52, 52’ are...
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