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Sputtering target

A technology of sputtering target and sputtering target, which is applied in the field of sputtering target to achieve the effect of preventing cracking

Active Publication Date: 2016-04-13
JX NIPPON MINING & METALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the problem is that it is difficult to meet these requirements simply by filling the bonding material between the cylindrical base material and the cylindrical sputtering target so as not to create voids.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0077] The result of evaluating the contact angle with respect to the amount of the metal component contained in the bonding material in the case of using indium (In) as the bonding material is shown. Six types of samples containing different components were prepared using indium (In), which is a metal element constituting the bonding material.

[0078] Sample 1 is indium (In) with a purity of 99.99%, sample 2 is indium (In) containing 2000 ppm copper (Cu), sample 3 is indium (In) containing 5000 ppm copper (Cu), and sample 4 is indium (In) containing 7000 ppm copper (Cu), sample 5 is indium (In) containing 10000 ppm copper (Cu), and sample 6 is indium (In) containing 890 ppm titanium (Ti).

[0079] In this embodiment, indium (In) corresponds to the first metal element constituting the bonding material, and copper (Cu) and titanium (Ti) correspond to the second metal element.

[0080] The base surface was evaluated in a state where the same type of metal as that of each sampl...

Embodiment 2

[0096] Using ITO as a flat-plate sputtering target and indium (In) as a first metal element in a bonding material, the occurrence of cracks in the target when the content of the second metal element was changed was evaluated.

[0097] The size of the ITO-based flat-plate sputtering target is 127 mm × 508 mm × 6.35 mm (height × width × thickness), and the same as that used in sample 2 or sample 3 in Example 1 was used as the bonding material. Joining material.

[0098] Sputtering is carried out under the following conditions, the sputtering conditions are: the sputtering gas is argon (Ar), the sputtering pressure is 0.6Pa, and the sputtering power density (DC) is 2.3W / cm 2 .

[0099] When the appearance evaluation of the target material after sputtering was performed, it was confirmed that no cracks or the like occurred.

Embodiment 3

[0101] The evaluation results of the contact angle in the case of using indium (In) as the first metal element in the bonding material and titanium (Ti) as the second metal element are shown. In this example, the evaluation results of samples with different titanium (Ti) contents relative to indium (In) are shown.

[0102] Sample 1 is indium (In) with a purity of 99.99%, which is the same as in Example 1. Sample 7 is indium (In) containing 18 ppm of titanium (Ti), sample 8 is indium (In) containing 60 ppm of titanium (Ti), and sample 9 is indium (In) containing 120 ppm of titanium (Ti). . In addition, Sample 6 is indium (In) containing 890 ppm of titanium (Ti), which is the same as that of Example 1.

[0103] In this embodiment, indium (In) corresponds to the first metal element constituting the bonding material, and titanium (Ti) corresponds to the second metal element.

[0104] The base surface was evaluated in a state where the same type of metal as that of each sample w...

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Abstract

The invention relates to a sputtering target, and one of the purposes is to provide a sputtering target capable of preventing cracking of a sputtering target material and being stably held on a base material. The sputtering target provided by the invention has a base material formed by metal, a sputtering target material arranged on one side of the base material and a bonding material arranged between the base material and the abovementioned sputtering target material, the bonding material at least contains a first metallic element and a second metallic element, and relative to the first metallic element, the second metallic element is contained at a concentration of 10ppm to 5000ppm.

Description

technical field [0001] One embodiment of the present invention relates to a sputtering target that joins a target material and a base material with a joining material formed of a metal material. Background technique [0002] The sputtering target used when forming a thin film by sputtering is attached to the sputtering apparatus in the state bonded to the base material for supporting this sputtering target. A typical sputtering target has a form in which a plate-shaped target material is bonded to a plate-shaped support base (this is also referred to as a “support plate”). [0003] The sputtering target attached to the sputtering apparatus is kept under reduced pressure during film formation by sputtering, and is irradiated with ions generated in glow discharge plasma such as argon gas to perform sputtering. Since ion irradiation increases the temperature of the target, the sputtering apparatus is provided with a cooling mechanism for the sputtering target. As a cooling me...

Claims

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Application Information

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IPC IPC(8): C23C14/34C23C14/35
CPCC23C14/34C23C14/3407C23C14/35
Inventor 馆野谕
Owner JX NIPPON MINING & METALS CO LTD