Method for manufacturing semiconductor light emitting device

Abstract

The present invention provides a method for manufacturing semiconductor luminous devices, including: the semiconductor layer that forms the first electrical type; multiple quantum trap layers and multiple quantum potential layers are formed by alternating the semiconductor layer of the first electrical type.A source layer is formed; and a semiconductor layer that forms a second -conductive type on the source layer.The multiple quantum potential layers include at least one of the first quantum base layers of the semiconductor layer near the first -electrical type and at least one second quantum power layer of the semiconductor layer near the secondary conductivity type.The formation of the active layer includes at least one first quantum potential layer as described in the first temperature; and at least one second quantum potential layer described in the second temperature below the first temperature.The invention also provides a light emitting module and a lighting device.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2014-0132546 filed with the Korean Intellectual Property Office on Oct. 1, 2014, the entire disclosure of which is incorporated herein by reference. technical field [0003] The present disclosure relates to a method of manufacturing a semiconductor light emitting device. Background technique [0004] A semiconductor light emitting device is a semiconductor device capable of generating light in a specific wavelength band through the recombination of electrons and holes. Compared to filament-based light sources, such semiconductor light emitting devices have advantageous features such as relatively long lifetime, low power consumption, excellent initial operating characteristics, and the like. Accordingly, demand for semiconductor light emitting devices continues to increase. In particular, Group III nitride semiconductors capable of emitting light...

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Problems solved by technology

On the other hand, quantum well layers generally need to be grown at low temperatures, and, for example, when high temperature barrier layers are grown under such quantum well layer growth, thermal damage may occur to the quantum well layers

Specifically, in the case where the quantum well layer contains an element having a highly volatile characteristic such as indium, the quantum well layer may be degraded due to the volatility of indium during the process of high-temperature treatment of the quantum barrier layer, or the luminous efficiency may be deteriorated due to The degradation of the interface characteristics is significantly reduced

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