Unlock instant, AI-driven research and patent intelligence for your innovation.

Light-emitting device and manufacturing method therefor, and display apparatus

A technology of light-emitting devices and manufacturing methods, applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve problems such as HTL damage and performance degradation of light-emitting devices, and achieve the effect of avoiding performance degradation

Active Publication Date: 2016-04-13
BOE TECH GRP CO LTD
View PDF7 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, TFB will be dissolved by the quantum dot solvent (toluene), resulting in HTL damage, which will lead to the degradation of the performance of the light-emitting device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Light-emitting device and manufacturing method therefor, and display apparatus
  • Light-emitting device and manufacturing method therefor, and display apparatus
  • Light-emitting device and manufacturing method therefor, and display apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0041] In order for those skilled in the art to better understand the technical solution of the present invention, the light-emitting device, its manufacturing method and display device provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0042] figure 1 A schematic structural diagram of a light-emitting device provided in Embodiment 1 of the present invention, such as figure 1 As shown, the light-emitting device includes: a base substrate 1 and a first electrode layer 2, a second electrode layer 3, and a light-emitting layer 4 located on the base substrate 1, and the light-emitting layer 4 is located on the first electrode layer 2 and the second electrode Between the layers 3; the light-emitting layer 4 includes a hole transport layer 41, and the hole transport layer 41 has a first thickness d1, so as to avoid performance degradation of the light-emitting device.

[0043] In this embodiment, the first electrode la...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a light-emitting device and a manufacturing method therefor, and a display apparatus. The light-emitting device comprises a substrate base plate, and a first electrode layer, a second electrode layer and a light-emitting layer arranged on the substrate base plate, wherein the light-emitting layer is positioned between the first electrode layer and the second electrode layer; the light-emitting layer comprises a hole transporting layer; and the hole transporting layer has a first thickness to avoid performance degradation of the light-emitting device. According to the light-emitting device, the first electrode layer, the second electrode layer and the light-emitting layer are formed on the substrate base plate; the light-emitting layer is positioned between the first electrode layer and the second electrode layer; the light-emitting layer comprises the hole transporting layer; and the hole transporting layer has the first thickness, so that the performance degradation of the light-emitting device is avoided consequently.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a light-emitting device, a manufacturing method thereof, and a display device. Background technique [0002] Quantum Dot (QuantumDot) electroluminescent devices have the advantages of high color gamut, bright colors, sharpness, and large-scale devices, so companies and scientific research institutions have conducted extensive research on them. In particular, the quantum dot electroluminescent device of the solution process has the potential of industrial application and has been widely concerned recently. [0003] The most ideal electron transport layer (Electron Transport Layer, referred to as: ETL) material of quantum dot electroluminescent devices is nano-zinc oxide particles (ZnOnanoparticle), the most ideal hole transport layer material (Hole Transport Layer, referred to as: HTL) is poly(9 ,9-dioctylfluorene-co-N-(4-butylphenyl)diphenylamine) (abbreviation: TFB). However,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/15H10K50/11H10K2102/351H10K71/15H10K50/115H10K50/00H10K71/00H01L33/005H01L33/06H01L33/14H01L33/36
Inventor 何晓龙舒适徐威曹占锋姚继开
Owner BOE TECH GRP CO LTD