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Programming method, memory storage device and memory control circuit unit

A programming method and memory module technology, applied in the field of memory storage devices and memory control circuit units, programming methods, and can solve problems such as multiple error bits

Active Publication Date: 2019-08-06
PHISON ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if the way in which the word lines are programmed is not managed, it may result in too many erroneous bits in the stored data

Method used

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  • Programming method, memory storage device and memory control circuit unit
  • Programming method, memory storage device and memory control circuit unit
  • Programming method, memory storage device and memory control circuit unit

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Experimental program
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Embodiment Construction

[0111] In general, a memory storage device (also referred to as a memory storage system) includes a rewritable non-volatile memory module and a controller (also referred to as a control circuit). Typically a memory storage device is used with a host system so that the host system can write data to or read data from the memory storage device.

[0112] figure 1 It is a schematic diagram of a host system and a memory storage device according to an embodiment of the present invention. figure 2 It is a schematic diagram of a computer, an input / output device, and a memory storage device according to an embodiment of the present invention.

[0113] Please refer to figure 1 , the host system 11 generally includes a computer 12 and an input / output (input / output, I / O for short) device 13 . The computer 12 includes a microprocessor 122 , a random access memory (RAM) 124 , a system bus 126 and a data transmission interface 128 . The input / output device 13 includes, for example, fig...

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PUM

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Abstract

The present invention provides a programming method, a memory storage device and a memory control circuit unit. The method comprises: receiving a first writing command; according to the first writing command, selecting a first physical deleting unit and transmitting a first hopping writing command sequence, wherein the first hopping writing command sequence indicates performing a first hopping programming procedure, and the first hopping programming procedure comprises programming first data to the first character line of the first physical deleting unit; and after the first character line is programmed, skipping over a second character line adjacent to the first character line, and programming the first data to a third character line non-adjacent to the first character line. According to the present invention, the error caused by the programming of the adjacent character lines can be reduced.

Description

technical field [0001] The present invention relates to a memory management method, and more particularly, to a programming method, a memory storage device, and a memory control circuit unit. Background technique [0002] Digital cameras, mobile phones and MP3 players have grown rapidly over the past few years, resulting in a rapid increase in consumer demand for storage media. Since the rewritable non-volatile memory module (eg, flash memory) has the characteristics of data non-volatility, power saving, small size, and no mechanical structure, it is very suitable for being built in various portable devices such as the above. in a multimedia device. [0003] Generally, multiple word lines in a rewritable non-volatile memory module are programmed to store data. However, if the manner in which the word lines are programmed is not managed, too many erroneous bits may be generated in the stored data. SUMMARY OF THE INVENTION [0004] The present invention provides a program...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/10
Inventor 林纬刘建业
Owner PHISON ELECTRONICS