Active component circuit board
A technology of active components and circuit substrates, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as the inability to integrate oxide semiconductor thin film transistors, the inability to apply logic components, and limitations in application scope, and achieve the goal of improving reliability Effect
Active Publication Date: 2019-04-02
E INK HLDG INC
View PDF5 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, currently limited by the ability of large-area yellow light, oxide semiconductor thin film transistors still cannot be integrated, so that their application fields are limited, for example, they cannot be applied to logic elements
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0042] figure 1 It is a schematic cross-sectional view of an active device circuit substrate according to the first embodiment of the present invention. Figure 2A to Figure 2C yes figure 1 The top view schematic diagrams of the three implementation types of the relative arrangement relationship of the channel layer, the source electrode and the drain electrode. Figure 3A to Figure 3C yes figure 1 The schematic top views of the three implementation types of the relative arrangement relationship between the first active element and the second active element. Please refer to figure 1 The active device circuit substrate 100 includes a substrate 110 , a plurality of active devices 120 and a first planar layer 130 .
[0043] The active device 120 is disposed on the substrate 110 . Each active device 120 includes a gate GE, a channel layer CH, a source SE and a drain DE. In this embodiment, each active device 120 is, for example, a bottom gate thin film transistor. Specifica...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
An active device circuit substrate includes a substrate, a plurality of active devices, and a first planarization layer. Each active device includes a gate electrode, a channel layer stacked with the gate electrode, a source electrode, and a drain electrode. The source electrode and the drain electrode are disposed on the channel layer and located on opposite sides of the channel layer to define a channel area of the channel layer. The active devices include a first active device and a second active device. The first active device is disposed between the first planarization layer and the substrate, and the first planarization layer is disposed between the first active device and the second active device. A minimum linear distance between the channel area of the first active device and the channel area of the second active device along a direction parallel to the substrate is not smaller than 5 μm.
Description
technical field [0001] The present invention relates to a circuit substrate, and in particular to an active element circuit substrate. Background technique [0002] Most existing active component circuit substrates use amorphous silicon (a-Si) thin film transistors or low-temperature polysilicon thin film transistors as switching elements. However, with the development of technology, it has been pointed out that oxide semiconductor thin film transistors have higher mobility than amorphous silicon thin film transistors, and have higher mobility than low-temperature polysilicon thin film transistors. Excellent threshold voltage (referred to as: Vth) uniformity. Therefore, oxide semiconductor thin film transistors have the potential to become key components of next-generation active device circuit substrates. However, currently limited by the large-area yellow light capability, oxide semiconductor thin film transistors cannot be integrated, so that their application fields ar...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/12H01L29/786
CPCH01L29/7869H01L27/1225H01L27/1248H01L29/41733
Inventor 徐振航余宗玮许毓麟辛哲宏
Owner E INK HLDG INC