A kind of preparation method of rare earth thulium ion implantation titanium dioxide crystal
A technology of titanium dioxide and ion implantation, applied in chemical instruments and methods, crystal growth, single crystal growth, etc., can solve problems such as damage and high lattice
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
preparation example Construction
[0014] The preparation method of the titanium dioxide crystal comprises steps as follows:
[0015] (1) Sample treatment: the sample is titanium dioxide single crystal, the surface is optically polished, the size is 5mm×5mm, and the thickness is 0.5mm; the surface of the sample is cleaned with deionized water, alcohol and acetone;
[0016] (2) Ion implantation: multi-energy thulium ions are used to implant the polished surface of the titanium dioxide crystal treated in step (1), the temperature of the implanted target chamber is 600°C, and the energies of implanted ions are respectively 350keV, 200keV, 150keV, 80keV and 40keV, According to the principle of energy from high to low, the corresponding implanted ion dose is 6.67×10 14 Ions / cm², 1.44×10 14 Ions / cm², 1.94×10 14 Ions / cm², 1.44×10 14 Ions / cm² and 1.03×10 14 Ions / cm2;
[0017] (3) Annealing treatment: The titanium dioxide crystal samples injected in step (2) were respectively annealed in a high-temperature tube fur...
Embodiment 1
[0018] Embodiment 1: the preparation method of thulium ion implantation titanium dioxide crystal of the present invention comprises the following steps:
[0019] (1) Sample treatment: the titanium dioxide crystal size is 5mm×5mm, the thickness is 0.5mm, the surface is optically polished, cleaned with deionized water, alcohol and acetone successively, and set aside;
[0020] (2) Ion implantation: put the cleaned titanium dioxide crystal in step (1) into the target chamber of the accelerator for thulium ion implantation, the temperature of the target chamber is 600°C, and the implanted ion energies are 350keV, 200keV, 150keV, 80keV and 40keV respectively, The implantation is carried out in order of energy from high to low, and the corresponding implant doses are 6.67×10 14 Ions / cm², 1.44×10 14 Ions / cm², 1.94×10 14 Ions / cm², 1.44×10 14 Ions / cm² and 1.03×10 14 Ions / cm2;
[0021] Select the non-annealed thulium ion implanted titanium dioxide crystal of the present invention, t...
Embodiment 2
[0022] Embodiment 2: the preparation method of thulium ion implantation titanium dioxide crystal of the present invention, comprises the following steps:
[0023] (1) Sample treatment: the titanium dioxide crystal size is 5mm×5mm, the thickness is 0.5mm, the surface is optically polished, cleaned with deionized water, alcohol and acetone successively, and set aside;
[0024] (2) Ion implantation: put the cleaned titanium dioxide crystal in step (1) into the target chamber of the accelerator for thulium ion implantation, the temperature of the target chamber is 600°C, and the implanted ion energies are 350keV, 200keV, 150keV, 80keV and 40keV respectively, The implantation is carried out in order of energy from high to low, and the corresponding implant doses are 6.67×10 14 Ions / cm², 1.44×10 14 Ions / cm², 1.94×10 14 Ions / cm², 1.44×10 14 Ions / cm² and 1.03×10 14 Ions / cm2;
[0025] (3) Annealing treatment: the titanium dioxide crystal sample injected in step (2) was annealed in...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com