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Preparation method for erbium-ytterbium-doped polycrystalline oxide film

An oxide film, double doping technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problems of reducing Er emission-absorption efficiency, quenching, etc., to avoid concentration quenching phenomenon , the effect of high erbium-ytterbium doping concentration

Active Publication Date: 2013-06-05
CHINA UNIV OF MINING & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Using traditional diffusion or ion implantation to realize interstitial doping, increasing the Er ion doping concentration will greatly reduce Er 3+ Emission-absorption efficiency, even lead to quenching phenomenon
There is currently no research on the use of Erbium-Ytterbium dual doping in the spinel lattice structure to achieve Er x Yb y ZnAl (2-x-y) o 4 Research Report on Oxide Materials

Method used

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  • Preparation method for erbium-ytterbium-doped polycrystalline oxide film
  • Preparation method for erbium-ytterbium-doped polycrystalline oxide film
  • Preparation method for erbium-ytterbium-doped polycrystalline oxide film

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Experimental program
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Effect test

Embodiment 1

[0018] Er of the present invention x Yb y ZnAl (2-x-y) o 4 The preparation method of polycrystalline oxide thin film, comprises the following steps:

[0019] 1) Select the number of moles of Er element x =0.035, the number of moles of Yb element y =0.105, the calculated mass ratio of erbium, ytterbium, zinc and aluminum elements in the alloy target is 1:3.11:11.11:8.58. Add high-purity zinc (99.99%) and high-purity aluminum (99.99%) with a mass ratio of 11.11:8.58 into a high-temperature alloy melting furnace at 650°C to melt, stir evenly, and cool to cast zinc-aluminum binary alloy ingots; Then crush the zinc-aluminum binary alloy ingot in a vacuum environment, grind it into alloy powder with a ball mill, and set aside;

[0020] 2) High-purity rare earth erbium (99.9%) and high-purity rare earth ytterbium (99.9%) metal powder with the mass ratio of erbium and ytterbium elements determined in step 1) of 1:3.11 and the zinc-aluminum binary alloy prepared in step 1) The p...

Embodiment 2

[0027] Er of the present invention x Yb y ZnAl (2-x-y) o 4 The preparation method of polycrystalline oxide thin film, comprises the following steps:

[0028] 1) Select the number of moles of Er element x =0.007, the number of moles of Yb element y =0.035, the calculated mass ratio of erbium, ytterbium, zinc and aluminum elements in the alloy target is 1:5.18:55.6:45.22. Add high-purity zinc (99.99%) and high-purity aluminum (99.99%) with a mass ratio of 55.6:45.22 into a high-temperature alloy melting furnace at 650°C to melt, stir evenly, and cool to cast zinc-aluminum binary alloy ingots; Then crush the zinc-aluminum binary alloy ingot in a vacuum environment, grind it into alloy powder with a ball mill, and set aside;

[0029] 2) High-purity rare earth erbium (99.9%) and high-purity rare earth ytterbium (99.9%) metal powder with the mass ratio of erbium and ytterbium elements determined in step 1) of 1:5.18 and the zinc-aluminum binary alloy prepared in step 1) The p...

Embodiment 3

[0036] Er of the present invention x Yb y ZnAl (2-x-y) o 4 The preparation method of polycrystalline oxide thin film, comprises the following steps:

[0037] 1) Select the number of moles of Er element x =0.105, the number of moles of Yb element y =0.105, the calculated mass ratio of erbium, ytterbium, zinc and aluminum elements in the alloy target is 1:1.05:3.75:2.79. Add high-purity zinc (99.99%) and high-purity aluminum (99.99%) with a mass ratio of 3.75:2.79 to a high-temperature alloy melting furnace at 650°C to melt, stir evenly, and cool to cast zinc-aluminum binary alloy ingots; Then crush the zinc-aluminum binary alloy ingot in a vacuum environment, grind it into alloy powder with a ball mill, and set aside;

[0038] 2) High-purity rare earth erbium (99.9%) and high-purity rare earth ytterbium (99.9%) metal powder with the mass ratio of erbium and ytterbium elements determined in step 1) of 1:1.05 and the zinc-aluminum binary alloy prepared in step 1) The powde...

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Abstract

The invention discloses a preparation method for an erbium-ytterbium-doped polycrystalline oxide film, and particularly relates to an ErxYbyZnAl (2-x-y) O4 polycrystalline oxide film material and a preparation method thereof. The erbium-ytterbium-doped polycrystalline oxide film comprises the components by mass percent as follows: 0.9%-11.8% of erbium, 4.8%-12.2% of ytterbium, 43.6%-52% of zinc, and 32.4%-42.3% of aluminum. The preparation method comprises the steps as follows: firstly, an alloy sputtering target with the general formula of ErxYbyZnAl (2-x-y) is prepared; secondly, an alloy film of ErxYbyZnAl (2-x-y) is prepared by adopting a direct-current magnetic-control sputtering technology; and finally, the ErxYbyZnAl (2-x-y) O4 polycrystalline oxide film is prepared in the oxygen atmosphere of a high-temperature furnace through annealing. The prepared erbium-ytterbium-doped oxide material can realize high erbium-ytterbium doping density, and meanwhile can realize the effective fluorescence emission of Er at a wave band of 1540 nm.

Description

technical field [0001] The invention relates to the field of optoelectronic information functional materials, in particular to an erbium-ytterbium double-doped Er x Yb y ZnAl (2-x-y) o 4 Preparation method of polycrystalline oxide thin film. Background technique [0002] Erbium (Er) is one of the important rare earth magnetic elements, Er 3+ The electron transition in the 4f layer of ions is shown as near-infrared emission in the 1.54 μm band, which can be used in optical communication, measurement and other fields. In order to improve the absorption coefficient of the host material to the pumping source and the laser output efficiency, on the one hand, it is necessary to increase the doping concentration of Er ions; Improve the laser output efficiency of Er ions. Therefore, Er, Yb double-doped optoelectronic information materials have been extensively studied. Using traditional diffusion or ion implantation to realize interstitial doping, increasing the Er ion dopin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/06C23C14/58
Inventor 贾传磊
Owner CHINA UNIV OF MINING & TECH
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