Preparation method of rare-earth thulium ion-implantation titanium dioxide crystals

A technology of titanium dioxide and ion implantation, applied in chemical instruments and methods, crystal growth, single crystal growth, etc., can solve problems such as high lattice and damage

Inactive Publication Date: 2016-05-11
CHINA UNIV OF MINING & TECH
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Problems solved by technology

At present, reports in the literature about thulium ion implantation into TiO 2 Crystal studies all use single energy, single dose, and normal temperature target chamber implantation. When the implantation dose is high, the concentration quenching effect of Tm ion fluorescence emission is likely to occur, and high lattice

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  • Preparation method of rare-earth thulium ion-implantation titanium dioxide crystals

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preparation example Construction

[0014] The preparation method of the titanium dioxide crystal comprises steps as follows:

[0015] (1) Sample treatment: the sample is titanium dioxide single crystal, the surface is optically polished, the size is 5mm×5mm, and the thickness is 0.5mm; the surface of the sample is cleaned with deionized water, alcohol and acetone;

[0016] (2) Ion implantation: multi-energy thulium ions are used to implant the polished surface of the titanium dioxide crystal treated in step (1), the temperature of the implanted target chamber is 600°C, and the energies of implanted ions are respectively 350keV, 200keV, 150keV, 80keV and 40keV, According to the principle of energy from high to low, the corresponding implanted ion dose is 6.67×10 14 Ions / cm², 1.44×10 14 Ions / cm², 1.94×10 14 Ions / cm², 1.44×10 14 Ions / cm² and 1.03×10 14 Ions / cm2;

[0017] (3) Annealing treatment: The titanium dioxide crystal samples injected in step (2) were respectively annealed in a high-temperature tube fur...

Embodiment 1

[0018] Embodiment 1: the preparation method of thulium ion implantation titanium dioxide crystal of the present invention comprises the following steps:

[0019] (1) Sample treatment: the titanium dioxide crystal size is 5mm×5mm, the thickness is 0.5mm, the surface is optically polished, cleaned with deionized water, alcohol and acetone successively, and set aside;

[0020] (2) Ion implantation: put the cleaned titanium dioxide crystal in step (1) into the target chamber of the accelerator for thulium ion implantation, the temperature of the target chamber is 600°C, and the implanted ion energies are 350keV, 200keV, 150keV, 80keV and 40keV respectively, The implantation is carried out in order of energy from high to low, and the corresponding implant doses are 6.67×10 14 Ions / cm², 1.44×10 14 Ions / cm², 1.94×10 14 Ions / cm², 1.44×10 14 Ions / cm² and 1.03×10 14 Ions / cm2;

[0021] Select the non-annealed thulium ion implanted titanium dioxide crystal of the present invention, t...

Embodiment 2

[0022] Embodiment 2: the preparation method of thulium ion implantation titanium dioxide crystal of the present invention, comprises the following steps:

[0023] (1) Sample treatment: the titanium dioxide crystal size is 5mm×5mm, the thickness is 0.5mm, the surface is optically polished, cleaned with deionized water, alcohol and acetone successively, and set aside;

[0024] (2) Ion implantation: put the cleaned titanium dioxide crystal in step (1) into the target chamber of the accelerator for thulium ion implantation, the temperature of the target chamber is 600°C, and the implanted ion energies are 350keV, 200keV, 150keV, 80keV and 40keV respectively, The implantation is carried out in order of energy from high to low, and the corresponding implant doses are 6.67×10 14 Ions / cm², 1.44×10 14 Ions / cm², 1.94×10 14 Ions / cm², 1.44×10 14 Ions / cm² and 1.03×10 14 Ions / cm2;

[0025] (3) Annealing treatment: the titanium dioxide crystal sample injected in step (2) was annealed in...

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Abstract

The invention relates to a preparation method of rare-earth thulium ion-implantation titanium dioxide crystals, belonging to preparation methods of titanium dioxide crystals. The preparation method comprises the following steps: implanting rare-earth thulium ions into titanium dioxide (TiO2) crystals by ion implantation, and carrying out high-temperature annealing treatment on the implanted sample in an oxygen atmosphere. The thulium ions are firstly implanted into the titanium dioxide crystal surface by using five different energies within the range of 40-350 keV, wherein the total dose is 1.25*10<15> ions/square centimeter, and the temperature of the implantation target chamber is 600 DEG C; and the annealing treatment is carried out on the implanted sample at the temperature of 800-1000 DEG C. The prepared thulium-ion-implanted titanium dioxide crystals can effectively implement Tm element fluorescence emission within the waveband of 1420-1450nm. The multi-energy multi-dose thulium ions are implanted into the TiO2 crystals to obtain the uniform thulium ion concentration distribution within a wider depth range, and the 600-DEG C high-temperature target chamber is adopted for implantation to reduce the lattice damage. The prepared thulium-ion-implanted titanium dioxide crystals can be subjected to 800-DEG C high-temperature annealing for 30 minutes to obtain the optimal Tm element fluorescence emission within the waveband of 1420-1450nm.

Description

technical field [0001] The invention relates to a method for preparing titanium dioxide crystals, in particular to a method for preparing titanium dioxide crystals implanted with rare earth thulium ions. Background technique [0002] Titanium dioxide (TiO2) is an important wide-bandgap semiconductor material, which has important applications in the fields of solar cells, semiconductor photocatalysis, and optoelectronic information science. The research and application of thulium (Tm) element-doped titanium dioxide materials in the fields of up-conversion fluorescence emission, infrared fluorescence emission, and infrared photocatalysis have also received extensive attention in recent years. It is difficult to precisely control the depth and concentration distribution of Tm ions by using traditional sol-gel method, liquid phase deposition method, magnetron sputtering and other methods to achieve thulium doping. Ion implantation is an important material surface modification a...

Claims

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Application Information

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IPC IPC(8): C30B31/22C30B33/02C30B29/16
CPCC30B29/16C30B31/22C30B33/02
Inventor 贾传磊李松
Owner CHINA UNIV OF MINING & TECH
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