Neutron single event effect testing method of SRAM

Abstract

The invention provides a neutron single event effect testing method of a SRAM. The method comprises the following steps: S1: configuring the SRAM, writing an original value in the SRAM and reading back a written value in the SRAM to obtain a first readback result; S2: carrying out irradiation, reading back the written value in the SRAM to obtain a second readback result after irradiating according to a first preset fluence, and then comparing the second readback result with the first readback result, and counting the number of errors happened; and S3: repeating S2 until the counted number of errors happened reaches a preset number of errors or the current total injection volume of current irradiation reaches a second preset fluence, then stopping the test. The method disclosed by the invention can be used for effectively testing the neutron single event effect of the SRAM and further improving the accuracy of the testing result.

Description

technical field [0001] The invention relates to the technical field of single event effect test, in particular to a SRAM neutron single event effect test method. Background technique [0002] SRAM (Static RAM, static random access memory) is the key core device of airborne electronic equipment. This type of device will encounter about 300-18000 1MeV-1000MeV high-energy particles per square centimeter per hour at a flight altitude of 3km-20km. Atmospheric neutrons produce single-event effects, which induce airborne electronic equipment to produce atmospheric neutron single-event soft errors and hard faults, bringing safety hazards to airborne electronic equipment. [0003] In order to improve the safety of airborne electronic equipment, it is necessary to test the neutron single event effect of SRAM in advance. At present, neutrons with 14 MeV energy are used in China to conduct ground simulation tests on SRAM to obtain sensitive cross-section data. In order to ensure the sci...

AI Technical Summary

Problems solved by technology

[0002] SRAM (Static RAM, static random access memory) is the key core device of airborne electronic equipment. This type of device will encounter about 300-18000 1MeV-1000MeV high-energy particles per square centimeter per hour at a flight altitude of 3km-20km. Atmospheric neutrons produce single event effects, which induce airborne electronic equipment to produce atmospheric neutron single event soft errors and hard faults, bringing safety hazards to airborne electronic equipment

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