Formation method of TEM sample

Abstract

The invention discloses a transmission electron microscope sample forming method. According to the transmission electron microscope sample forming method, a substrate is provided, and a defect area is in the substrate; a first groove, a second groove, a third groove, and a fourth groove are formed in the substrate around the defect area; the part of the substrate surrounded by the first groove, the second groove, the third groove, and the fourth groove is a sample to be pretreated; an opening is formed in the sample to be pretreated; the top of the opening is on a second surface; the opening comprises a first side wall, and the first side wall is parallel to a surface to be detected; the first side wall is subjected to thinning until the distance from the first side wall to the surface to be detected is equal to a preset distance; after thinning of the first side wall, a cut penetrating the first side wall and the surface to be detected is formed; a sample to be detected is formed via surrounding of the sample to be pretreated by the cut; the sample to be detected comprises the defect area; and the sample to be detected is separated from the sample to be pretreated. The transmission electron microscope sample forming method is capable of ensuring wafer completeness, and accuracy of sample forming.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a transmission electron microscope sample. Background technique [0002] In the semiconductor manufacturing industry, there are a variety of inspection equipment, among which the electron microscope is an important tool for inspecting the morphology, size and characteristics of the thin film during composition. Commonly used electron microscopes include transmission electron microscope (Transmission Electron Microscope, TEM for short) and scanning electron microscope (Scanning Electron Microscope, SEM for short). The working principle of the transmission electron microscope includes: putting the sample to be tested into the transmission electron microscope observation room, irradiating the sample with a high-voltage accelerated electron beam, enlarging the sample shape and projecting it on the screen, and completing the photography, and th...

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Problems solved by technology

[0005] However, the above-mentioned method of forming samples will completely destroy the complete wafer. Moreover, with the reduction of the size of semiconductor devices and the improvement of integration, the accuracy of the formed samples can no longer meet the detection requirements. Therefore, it is necessary to seek more accurate sample formation. Method to reduce damage to wafer integrity and improve dimensional accuracy of formed samples

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