Application of alkaline polishing solution in improving surface roughness of barrier layer in CMP

A technology of surface roughness and polishing liquid, applied in polishing compositions containing abrasives, etc., to reduce surface roughness, speed up mass transfer, and achieve the effect of flattening the polishing surface

Inactive Publication Date: 2016-06-08
TIANJIN JINGLING MICROELECTRONIC MATERIALS CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

None of the above-mentioned patent methods mentioned the problem of effectively improving the surface roughness after polishing

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Application of alkaline polishing solution in improving surface roughness of barrier layer in CMP
  • Application of alkaline polishing solution in improving surface roughness of barrier layer in CMP
  • Application of alkaline polishing solution in improving surface roughness of barrier layer in CMP

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Put 1ml of FA / OⅡ chelating agent into 400ml of ultrapure water, then pour 0ml of FA / OⅠsurfactant into the ultrapure water, stir continuously during the process, add a small amount of ultrapure water to make it solution after it is completely mixed The volume reaches 500ml, and then these mixed solutions are poured into 500ml of SiO 2 In the hydrosol, stir continuously during the process until it is completely poured. Then under the process of working pressure: 27.4kpa; polishing head / polishing disc speed: 105 / 100rpm; flow rate: 150mL / min, the graphic sheet is polished for 180s, and the surface roughness of the barrier layer is checked with an atomic force microscope after polishing;

Embodiment 2

[0025] Put 1ml of FA / OⅡ chelating agent into 400ml of ultrapure water, then pour 5ml of FA / OⅠsurfactant into the ultrapure water, stir continuously during the process, add a small amount of ultrapure water to make it solution after it is completely mixed The volume reaches 500ml, and then these mixed solutions are poured into 500ml of SiO 2 In the hydrosol, stir continuously during the process until it is completely poured. Then under the process of working pressure: 27.4kpa; polishing head / polishing disc speed: 105 / 100rpm; flow rate: 150mL / min, the graphic sheet is polished for 180s, and the surface roughness of the barrier layer is checked with an atomic force microscope after polishing;

Embodiment 3

[0027] Put 1ml of FA / OⅡ chelating agent into 400ml of ultrapure water, then pour 10ml of FA / OⅠsurfactant into the ultrapure water, stir continuously during the process, after it is completely mixed, add a small amount of ultrapure water to make it solution The volume reaches 500ml, and then these mixed solutions are poured into 500ml of SiO 2 In the hydrosol, stir continuously during the process until it is completely poured. Then under the process of working pressure: 27.4kpa; polishing head / polishing disc speed: 105 / 100rpm; flow rate: 150mL / min, the graphic sheet is polished for 180s, and the surface roughness of the barrier layer is checked with an atomic force microscope after polishing;

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
electrical resistivityaaaaaaaaaa
Login to view more

Abstract

The invention relates to an application of an alkaline polishing solution in improving surface roughness of a barrier layer in CMP. The alkaline polishing solution is mainly composed of an abrasive compound, an FA / O II chelating agent, an FA / O I surfactant and ultrapure water, and is characterized in that the FA / O I surfactant has infiltration capacity which enables the alkaline polishing solution to effectively improve surface roughness of the barrier layer. The invention has beneficial effects as follows: the FA / O I surfactant in the alkaline polishing solution has high infiltration capacity, which helps transport a polishing product by the polishing solution; by wetting action, the FA / O I surfactant molecules rapidly spread out on the surface of a wafer so as to form a uniform and compact protective layer; and the FA / O I surfactant in the polishing solution can accelerate mass transfer of the polishing product, removal rate of convex-concave part on the surface of the barrier layer of the wafer is different, height difference of the convex-concave part is reduced, surface roughness is decreased, and planarization of the polished surface is realized.

Description

technical field [0001] The invention belongs to the field of chemical mechanical polishing, and in particular relates to the application of an alkaline polishing liquid to improve the surface roughness of a barrier layer in CMP. Background technique [0002] In very large scale integration (GLSI) multilayer wiring chemical mechanical planarization (CMP), the surface roughness after polishing is too high, which will cause increased noise, poor consistency of electrical characteristics, and affect device frequency characteristics such as increasing RC delay time, etc. , thus affecting the degree of integration, reliability, excellent product rate and cost reduction. There are many factors that affect the surface roughness, including the polishing process conditions (such as temperature, pressure, flow rate, etc.), the composition of the polishing liquid, the selection of the polishing cloth, and so on. The traditional copper interconnect polishing process is usually divided i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 刘玉岭郑环潘国峰
Owner TIANJIN JINGLING MICROELECTRONIC MATERIALS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap