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Super junction device and corner structure layout design and manufacture process thereof

A super-junction device and layout design technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as insufficient improvement of the overall withstand voltage, and achieve the effect of improving the withstand voltage

Inactive Publication Date: 2016-06-08
CHENGDU SMET TECH
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  • Claims
  • Application Information

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Problems solved by technology

But this is not enough to improve the overall withstand voltage to achieve the ideal design value

Method used

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  • Super junction device and corner structure layout design and manufacture process thereof
  • Super junction device and corner structure layout design and manufacture process thereof
  • Super junction device and corner structure layout design and manufacture process thereof

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Embodiment Construction

[0045] The present invention will be further described below in conjunction with accompanying drawing:

[0046] Such as figure 1 and figure 2 As shown, the corner structure of the superjunction device of the present invention, in the corner region, the boundary of the repeating unit of the cell changes from a straight line (a boundary) to a curve (b boundary), and the doping pattern of the second conductivity type (shading Part) will be optimized and adjusted according to the distance in the vertical direction between the a boundary and the b boundary, so that the area ratio of the first conductivity type doping and the second conductivity type doping in the B' region is the same as that of the ordinary cell region ( figure 1 The ratio in the region A of ) is almost the same, so that the superjunction device can achieve almost the same withstand voltage value as that of the ordinary cell region at the corner.

[0047] Such as Figure 3-Figure 5As shown in the layout design...

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Abstract

The invention discloses a super junction device corner structure and a super junction device adopting the same. Corresponding structure pattern optimization and adjustment is made on a strip-shaped doping pattern of a second conductivity type in a corner area according to the boundary change of the corner (from a straight line to a curve) to make the area ratio of doping of a first conductivity type to doping of the second conductivity type in the corner area almost the same with the ratio in an ordinary cellular area and to make the charges of impurities of the first conductivity type and the charges of impurities of the second conductivity type balanced, and therefore, the super junction device achieves almost the same withstand voltage as an ordinary cellular area at the corner.

Description

technical field [0001] The invention relates to a power semiconductor superjunction device in the semiconductor industry, which mainly relates to the layout design and manufacturing process of the corner structure of the superjunction device. Background technique [0002] Power MOSFETs are typically used in devices requiring power conversion and power amplification. For power conversion devices, a representative device available on the market is a double-diffused MOSFET (DMOSFET). In a typical transistor, most of the breakdown voltage BV is carried by the drift region. In order to provide a higher breakdown voltage BV, the drift region should be lightly doped. However, a lightly doped drift region produces a high on-resistance Rdson. For a typical transistor, Rdson and BV 2.5 Proportional. Therefore, for conventional transistors, as the breakdown voltage BV increases, Rdson also increases sharply. [0003] A superjunction is a well-known semiconductor device. Superjunc...

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Application Information

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IPC IPC(8): H01L29/06H01L29/78H01L21/336
Inventor 胡浩
Owner CHENGDU SMET TECH
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