A scintillator detector based on molybdenum disulfide transistor and its manufacturing method
A technology of molybdenum disulfide and its production method, which is applied in the field of radiation detection, can solve the problems of low conversion efficiency of PIN photodiodes, low sensitivity of scintillator detectors, and poor signal-to-noise ratio, and achieve simple structure, low cost, and reduced dark The effect of current
Active Publication Date: 2018-12-04
GOLDEN SUN FUJIAN SOLAR TECHNIC
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Scintillation detectors using silicon photodiodes have the advantages of low cost and easy formation of large-area arrays, but due to the low conversion efficiency of PIN photodiodes, scintillation detectors have low sensitivity and poor signal-to-noise ratio
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[0022] In order to make the purpose, features and advantages of the present invention clearer, the specific implementation of the present invention will be described in more detail below in conjunction with the accompanying drawings and embodiments. In the following description, many specific details are set forth for the convenience of The invention is fully understood, but it can be practiced in many other ways than that described. Accordingly, the present invention is not limited to the specific implementations disclosed below.
[0023] A method for manufacturing a scintillator detector based on a molybdenum disulfide transistor, the scintillator detector is as figure 1 , figure 2 As shown, it includes a conductive silicon substrate 10, the back surface of the conductive silicon substrate 10 is provided with a gate electrode 11, the front surface is provided with a gate insulating layer 12, and the gate insulating layer 12 is provided with a single layer of molybdenum dis...
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The invention discloses a scintillator detector based on a molybdenum disulfide transistor. The scintillator detector comprises a conductive silicon substrate. The back surface of the conductive silicon substrate is provided with a gate electrode, and the front surface thereof is provided with a gate insulation layer; single-layer molybdenum disulfide is arranged on the gate insulation layer; the two ends of the single-layer molybdenum disulfide are provided with a source electrode and a drain electrode respectively; the source electrode and the drain electrode are connected with the gate insulation layer; the single-layer molybdenum disulfide is provided with a scintillator; the scintillator is arranged between the source electrode and the drain electrode; and the scintillator is externally wrapped by a protection layer. The scintillator detector based on the molybdenum disulfide transistor adopts the single-layer molybdenum disulfide as a photoelectric transistor and as a photovoltaic conversion device for the scintillator detector; and the scintillator is directly deposited on the single-layer molybdenum disulfide to serve as a high-energy particle receiver, so that the scintillator detector has the advantages of high sensitivity, fast response speed, simple structure and low cost.
Description
technical field [0001] The invention relates to the technical field of radiation detection, in particular to a molybdenum disulfide transistor-based scintillator detector and a manufacturing method thereof. Background technique [0002] Radiation detection technology is widely used in X-ray detection, CT, nuclear medicine radionuclide imaging, environmental radiation monitoring, high-energy ray detection and other fields, and the scintillator detector system is used to detect radioactive material radiation dose, energy spectrum, counting rate, etc. One of the most commonly used devices. In the fields of special nuclear material detection, radioactive material detection, low-dose environmental detection, and energy spectrum measurement, it has become the preferred technology in these fields due to its high detection efficiency, high measurement sensitivity, and wide spectral response. [0003] Traditional scintillation detectors use photomultiplier tubes as photoelectric con...
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IPC IPC(8): G01T1/202H01L31/18
CPCG01T1/202G01T1/2023H01L31/18Y02P70/50
Inventor 苏晓
Owner GOLDEN SUN FUJIAN SOLAR TECHNIC