A tio with a built-in electric field 2 Heterogeneous junction ultraviolet/deep ultraviolet detector device and its preparation

A built-in electric field, deep ultraviolet technology, applied in electrical components, semiconductor devices, circuits, etc., to reduce the effect of recombination

Inactive Publication Date: 2017-12-05
DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

TiO has not yet been used 2 Report on Heterogeneous Junction Thin Film Formed by Rutile Phase and Anatase Phase for Ultraviolet Detection

Method used

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  • A tio with a built-in electric field <sub>2</sub> Heterogeneous junction ultraviolet/deep ultraviolet detector device and its preparation
  • A tio with a built-in electric field <sub>2</sub> Heterogeneous junction ultraviolet/deep ultraviolet detector device and its preparation
  • A tio with a built-in electric field <sub>2</sub> Heterogeneous junction ultraviolet/deep ultraviolet detector device and its preparation

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] 1) Place the FTO transparent conductive substrate in acetone, isopropanol, ethanol and deionized water for 20 minutes, and then dry it under air flow;

[0029] 2) Place the pre-cleaned FTO transparent conductive substrate (conductive side down) in a polytetrafluoroethylene-lined hydrothermal kettle, add 0.15 mL of tetrabutyl titanate containing HCl and H 2 O volume ratio of 1:1 mixed solution, at 180 ℃ for 2h, grow TiO on the FTO substrate 2 Nanorod array, the length of the nanorod is about 2 μm; as image 3 As shown, the XRD results show that the synthesized nanorod array is a pure rutile phase.

[0030] 3) TiO obtained in step (2) 2 The surface of the rutile phase nanorod array structure is covered with a layer of porous metal mask, which is put into the magnetron sputtering equipment, and the ITO ceramic target is used as the target material. The equipment is first evacuated for 10 -7 Pa, and then pass Ar gas into it, adjust the sputtering pressure to 1Pa, and spu...

Embodiment 2

[0033] 1) Place the FTO transparent conductive substrate in acetone, isopropanol, ethanol and deionized water for 20 minutes, and then dry it under air flow;

[0034] 2) Place the pre-cleaned FTO transparent conductive substrate (conductive side down) in a polytetrafluoroethylene-lined hydrothermal kettle, add 0.15 mL of tetrabutyl titanate containing HCl and H2 O volume ratio of 1:1 mixed solution, at 180 ℃ for 2h, grow TiO on the FTO substrate 2 Rutile phase nanorod array, the length of the nanorod is about 2 μm;

[0035] 3) TiO obtained in step (2) 2 The rutile phase nanorod array is put into the magnetron sputtering equipment, and the metal Ti target is used as the sputtering target. The equipment is first vacuumed to make 10 -7 Pa, and then pass high-purity Ar gas into it, adjust the sputtering pressure to 1Pa, and sputter for 1h under the direct current mode of 100W to obtain a metal Ti layer with a thickness of 200nm. Finally, the obtained bilayer film was heat-treate...

Embodiment 3

[0039] 1) Place the FTO transparent conductive substrate in acetone, isopropanol, ethanol and deionized water for 20 minutes, and then dry it under air flow;

[0040] 2) Place the pre-cleaned FTO transparent conductive substrate (conductive side down) in a polytetrafluoroethylene-lined hydrothermal kettle, add 0.15 mL of tetrabutyl titanate containing HCl and H 2 O volume ratio of 1:1 mixed solution, at 180 ℃ for 2h, grow TiO on the FTO substrate 2 Nanorod array, the length of the nanorod is about 2 μm; as image 3 As shown, the XRD results show that the synthesized nanorod array is a pure rutile phase;

[0041] 3) TiO obtained in step (2) 2 The rutile phase nanorod array is put into the magnetron sputtering equipment, and the metal Ti target is used as the sputtering target. The equipment is first vacuumed to make 10 -7 Pa, then pass into it Ar:O 2 Mixed gas with a volume ratio of 85:15, adjust the sputtering pressure to 1Pa, and sputter for 1h under 400W DC mode to obtai...

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Abstract

The present invention provides a TiO with built-in electric field 2 A heterogeneous junction ultraviolet / deep ultraviolet detection device and its preparation method. The composition of the detector from bottom to top is transparent conductive substrate, TiO 2 Rutile Phase Film, TiO 2 Anatase Phase Films and Conductive Electrodes. It is characterized in that the detector has TiO 2 A heterogeneous junction composed of rutile and anatase phases via TiO 2 The built-in electric field formed between different crystal phases promotes the directional separation of photogenerated carriers and reduces the recombination of photogenerated carriers. with traditional TiO 2 Compared with the basic ultraviolet detector, the present invention has the advantages of no external bias voltage, fast response speed, high response sensitivity, convenient preparation and the like. Under the ultraviolet light less than 385nm, the photoresponse of the self-driven ultraviolet detector can reach 1.67mA / cm under the test condition of no external bias voltage 2 . The invention provides a new method for ultraviolet / deep ultraviolet light detection.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic devices, in particular to a TiO2 with built-in electric field 2 A heterogeneous junction ultraviolet / deep ultraviolet detection device and its preparation method. Background technique [0002] As an important branch of detection and sensing technology, ultraviolet detection technology has important application value in both military and civilian applications, so it has attracted great attention. With the rapid development of material preparation technology, great progress has been made in the development of ultraviolet detectors based on wide bandgap semiconductors, such as GaN, ZnO, SiC, etc. in recent years. However, most of these detectors require an external bias to promote the separation of photogenerated carriers and suppress the recombination of electrons and holes. Therefore, it has become a new research hotspot to research and develop ultraviolet detectors that can ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0296H01L31/09H01L31/18
CPCY02P70/50
Inventor 李灿严鹏丽冯兆池甘阳范峰滔安虹宇
Owner DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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