Preparation method of out-phase junction CdS nanowire

Abstract

The invention provides a preparation method of an out-phase junction CdS nanowire. The out-phase junction CdS nanowire comprises a hexagonal phase CdS crystal and a cubic phase CdS crystal. The preparation method comprises the following steps: preparing an ethylenediamine solution; respectively adding a cadmium chloride raw material and sublimed sulfur into an ethylenediamine solution to form a first reaction solution and a second reaction solution; dropwise adding the first reaction solution into the second reaction solution, and stirring to form a third reaction solution; adding an H2O2 solution into the third reaction solution, and stirring to form a CdS precursor solution; placing the CdS precursor solution in a reaction kettle, performing thermal reaction, and cooling to room temperature to obtain an out-phase junction CdS nanowire crude product; and separating, washing with water, washing with alcohol and drying to obtain het finished product of the out-phase junction CdS nanowire. According to the out-phase junction CdS nanowire, directional separation of carriers at an interface can be realized, the photocatalytic degradation efficiency and piezoelectric photocatalytic degradation efficiency can be greatly improved, and the preparation method is simple and efficient to operate, low in cost and suitable for mass production.

Description

technical field [0001] The invention belongs to the technical field of nanometer materials and relates to the preparation technology of CdS nanowires, in particular to a preparation method of heterogeneous junction CdS nanowires. Background technique [0002] With the rapid growth of the global economy, human demand for energy has increased sharply, and with the continuous reduction of non-renewable energy and the increasingly serious environmental pollution, it has had a huge impact on the development of human society and life safety and health. For example, semiconductor photocatalysis technology can effectively use sunlight, does not require additional energy consumption, and does not cause secondary pollution problems. It has been widely reported in the aspects of dealing with environmental pollution and energy crisis, as well as organic synthesis. [0003] In semiconductor photocatalysis technology, CdS material has narrow bandgap, strong photoresponse ability, adjustab...

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Problems solved by technology

[0006] In order to solve the problem of insufficient performance of the existing single-phase CdS photocatalytic material due to the rapid recombination of carriers, as well as the problems of complicated preparation route, high cost and many defects at the interface for constructing a multi-component heterojunction, A preparation method of heterogeneous junction CdS nanowires is designed. The heterogeneous junction CdS nanowires prepared by the preparation method of the present invention can solve the complex preparation route, high cost and interface contact problem of constructing multiple heterojunctions on the surface of CdS nanomaterials. At the same time, the prepared CdS nanowire is a heterogeneous junction CdS crystal formed by hexagonal phase and cubic phase, which can greatly improve the photocatalytic and piezoelectric photocatalytic degradation efficiency

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