A mmic equivalent die model based on phemt technology
A technology of die and model, which is applied in the research field of thermal characteristics of GaAsPHEMTMMIC amplifier chip die, can solve problems such as the lack of simulation and theoretical data results, the inability to provide accurate die channel temperature, and the high cost of infrared measurement technology. The molding process is simple and convenient, saving cost and time, and the results are accurate and reliable.
Active Publication Date: 2019-02-22
SUZHOU LIANG DONGXIN MICROELECTRONICS CO LTD
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Problems solved by technology
Infrared measurement techniques are costly and time consuming, and they do not provide accurate die channel temperature during the design phase of the chip
Some recently published patent applications, such as a thermal simulation equivalent model based on GaAs PHEMT MMIC (application number CN201510108171.0), an amplifier chip die thermal simulation equivalent model (application number CN201510108099.1), etc. The simulation is equivalent, and the simulation results are compared with the measured data, but there is no report on the direct comparison between the simulation and the theoretical data and the results are consistent
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Embodiment 1
[0017] This embodiment is a 0.1 watt K-band power amplifier chip, such as figure 1 As shown, it includes a gate 1, a source 2, a drain 3, a heat source 4, a connecting bar a5, and a connecting bar b6. The size ratios of the gate 1 , the source 2 , and the drain 3 are basically equal to the sizes of the gate, source, and drain of transistors in an actual chip. The heat source 4 is consistent with the grid length of the grid 1, and the width is 3 μm longer than that of the grid 1, and is placed on the lower surface of the grid 1 (from figure 2 It can be seen that the heat source 4 overlaps with the grid 1, and the heat source 4 protrudes 1.5 μm on the left and right in the width direction), and the thickness of the heat source 4 is 0.1 μm. Such as figure 2 As shown, the connection bar a5 connects the gate 1, the source 2, and the drain 3 on the left side, and presses the 1.5 μm of the heat source 4 protruding in the width direction on the left side. The connecting bar b6 co...
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The invention discloses an MMIC equivalent tube core model based on the PHEMT technology. The equivalent tube core model comprises a grid, a source, a drain, a heat source, a connecting strip a and a connecting strip b. The grid, the source and the drain are coincident with a transistor in a real MMIC chip in size. The heat source is put below the grid, and is coincident with the grid in length and width, the thickness of the heat source is 0.1 micron, and the heat consumption is obtained in the mode that the grid width of all tube cores in the chip are evenly distributed. By means of the MMIC equivalent tube core model, heat distribution of the MMIC tube core of the PHEMT technology can be accurately simulated in universal heat analysis software, and the effective and rapid method is provided for circuit design of the whole chip and reliability design.
Description
technical field [0001] The invention relates to a die equivalent structural model of an MMIC based on a PHEMT process, which is particularly suitable for the research on the thermal characteristics of the die of a GaAsPHEMT MMIC amplifier chip. Background technique [0002] Amplifier chips based on gallium arsenide or gallium nitride pseudomate high electron mobility transistor technology play an important role in the field of modern radar and communication. With the continuous increase of power consumption and the continuous reduction of chip size, excessively high die channel temperature will directly affect the reliability and performance of chips and devices. Accurate detection of temperature is an extremely important part of engineering applications. At present, the direct measurement method of the channel temperature of the amplifier chip is generally infrared thermal imaging technology. Infrared measurement techniques are costly and time consuming, and they do not p...
Claims
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IPC IPC(8): G06F17/50
CPCG06F30/20G06F30/367G06F30/398
Inventor 朱恒童华清徐秀琴许慧屠志晨王志宇尚永衡郁发新
Owner SUZHOU LIANG DONGXIN MICROELECTRONICS CO LTD