Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Manufacturing method and structure of light-sensing unit of light-sensing array

A manufacturing method and optical sensing technology, applied to electrical components, radiation control devices, semiconductor devices, etc., can solve problems such as increased manufacturing costs, electrical degradation, and electrical instability of semiconductor components

Active Publication Date: 2019-01-15
AU OPTRONICS CORP
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, during the deposition step of the photo-sensing unit, the oxide semiconductor device will be electrically unstable or degraded due to the generation of hydrogen ions
Based on the influence of hydrogen ions on the electrical properties of the oxide semiconductor layer, the existing manufacturing process of photo-sensing units will lead to the problem of lower yield and increase the manufacturing cost
In addition, existing oxide semiconductor devices are also easily affected by moisture, resulting in electrical instability of the semiconductor device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method and structure of light-sensing unit of light-sensing array
  • Manufacturing method and structure of light-sensing unit of light-sensing array
  • Manufacturing method and structure of light-sensing unit of light-sensing array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0100] In order to prove that the semiconductor element of the photo-sensing unit of the present invention can be used to block the diffusion of hydrogen ions and water vapor, so as to prevent the electrical properties of the active element TFT from being affected, the following examples are especially used for illustration.

[0101] Figure 10A It is the IV curve (Ids-Vgs curve) of a conventional semiconductor device. At Figure 10A In the embodiment, it is an IV curve diagram of the relationship between voltage and current measured for an existing semiconductor element without any hydrogen ions and moisture. Depend on Figure 10A It can be seen that in the absence of any hydrogen ions and moisture, the active elements of common semiconductor elements can normally switch under different voltages VD (0.1V and 10V).

[0102] Figure 10B It is an IV curve diagram of the semiconductor element of the photo-sensing unit according to an embodiment of the present invention. Fig...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a production method of a light sensing unit of a light sensing array. The production method is characterized in that a substrate is provided, and an active element can be formed in the unit area of the substrate; a first electrode layer is formed in the unit area of the substrate, and the first electrode layer is electrically connected with the active element; the active element is provided with a protection layer; the protection layer is provided with a shielding layer to shield the active element; after the shielding layer is formed, the light sensing layer can be formed on the protection layer in the unit area; and the light sensing layer can be provided with a second electrode layer.

Description

technical field [0001] The present invention relates to a method for manufacturing a sensing unit, and in particular to a method for manufacturing a photo-sensing unit of a photo-sensing array and its structure. Background technique [0002] The light sensing unit is a light sensing element commonly used in electronic devices such as mobile phones, tablet computers, notebook computers, or medical diagnostic aids. Traditionally, the manufacturing process of the photo-sensing unit is to form the corresponding photo-sensing unit after forming the oxide semiconductor layer. However, during the deposition step of the photo-sensing unit, the oxide semiconductor device will be electrically unstable or degraded due to the generation of hydrogen ions. Due to the influence of hydrogen ions on the electrical properties of the oxide semiconductor layer, the existing manufacturing process of the photo-sensing unit will cause the problem of lower yield and increase the manufacturing cost...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L27/1463H01L27/14683
Inventor 陈盈宪孙硕阳郑造时黄婉真徐文斌郑君丞
Owner AU OPTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com