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Power semiconductor modules with low gate drive inductance flex board connection

A technology for power semiconductors and flexible boards, which is applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., and can solve problems such as unsolved inductance

Active Publication Date: 2018-08-24
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Inductance on the gate driver board and within the power module or package is often not addressed

Method used

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  • Power semiconductor modules with low gate drive inductance flex board connection
  • Power semiconductor modules with low gate drive inductance flex board connection
  • Power semiconductor modules with low gate drive inductance flex board connection

Examples

Experimental program
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Effect test

Embodiment Construction

[0016] According to the embodiments described herein, a power semiconductor module comprises one or more power semiconductor die (chips) assembled on a substrate such as DCB (Direct Copper Bonding), AMB (Active Metal Brazing) or DAB (Direct Aluminum Bonding) Power boards such as substrates, printed circuit boards (PCBs), or lead frames. The upper side interconnects (eg emitter, anode, cathode, source, gate) of each power semiconductor die are in the form of bonded aluminum or copper wires, aluminum or copper ribbons or metal clips. Bonding methods such as sintering, diffusion welding, soldering, ultrasonic bonding, laser welding, or electron beam welding (EBW) may be used to attach (bond) the interconnect to the upper side terminals of the die.

[0017] A flexible board comprising insulator and metallization layers on both sides forms a parallel-plate waveguide (sometimes also called stripline) for the external gate drive circuitry that controls the switching of the die includ...

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PUM

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Abstract

The present application relates to power semiconductor modules with low gate drive inductance flex board connections. A power semiconductor module includes a metallization layer and a power semiconductor die attached to the metallization layer. The die has a first terminal and a second terminal disposed at a side of the die remote from the metallization layer. The power semiconductor module further includes a first interconnect attached to the first terminal, a second interconnect attached to the second terminal, and a flexible board including a first metal layer, a second metallization layer, and an insulator, the insulator Being located between the first metal layer and the second metal layer makes the first metal layer and the second metal layer electrically insulated from each other. The first metal layer is attached to the first interconnect and the second metal layer is attached to the second interconnect such that the flex board is separated from the power semiconductor die by the first interconnect and the second interconnect.

Description

technical field [0001] The present application relates to power semiconductor modules, in particular, to power semiconductor modules with low gate drive inductance. Background technique [0002] In power electronic circuits such as inverters, converters, etc., power semiconductor switches such as MOSFETs (Metal Oxide Field Effect Transistors), IGBTs (Insulated Gate Bipolar Transistors) and JFETs (Junction Field Effect Transistors) are passed through Control electrodes such as gate electrodes for MOSFETs, gate electrodes for IGBTs, base current electrodes for bipolar transistors, etc. are controlled. Commands for controlling the on, off, blocking and conducting states of the power semiconductor switches are generated in the controller and transmitted to the control terminals by a gate driver for each power switch. The gate driver offsets the command signal from the controller input voltage (e.g., via a transformer, optocoupler, level shifter, etc.) and shapes the drive signa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/48H01L23/52H01L21/768H01L21/60
CPCH01L21/768H01L23/48H01L23/52H01L24/26H01L24/31H01L2224/331H01L2224/31H01L2224/26H01L2224/4103H01L2224/40139H01L2224/40095H01L2224/0603H01L25/072H01L24/40H01L24/45H01L2224/45014H01L2224/45124H01L2224/45147H01L2924/181H01L2224/371H01L2224/8484H01L2224/37147H01L2224/4554H01L2224/83801H01L2224/8384H01L2224/8385H01L2224/3754H01L2224/84205H01L2224/84214H01L24/37H01L24/48H01L2224/05553H01L2224/05554H01L25/18H01L23/49833H01L23/4985H01L24/41H01L2224/73265H01L2224/92247H01L2224/84801H01L2224/40227H01L2224/73221H01L2224/32225H01L2224/48227H01L2924/00H01L2924/00014H01L2924/206H01L24/49H01L23/49844H01L24/32H01L24/73H01L25/16H01L24/83H01L24/84H01L24/85H01L24/92H01L2924/13055H01L2924/13091H01L2224/73263H01L2924/1426H01L2224/92246H01L2224/85801
Inventor R·拜雷尔
Owner INFINEON TECH AG