Substrate processing apparatus

A technology for processing equipment and substrates, applied in the direction of gaseous chemical plating, coatings, electrical components, etc., can solve problems such as deterioration, non-uniform characteristics of thin films, etc., to achieve improved productivity, increased thin film deposition rate, fast and easy cleaning Effect

Active Publication Date: 2016-07-20
CHARM ENG CO LTD
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Moreover, the non-uniformity of the film can deteriorate the characteristics of various devices fabricated

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Substrate processing apparatus
  • Substrate processing apparatus
  • Substrate processing apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] Hereinafter, specific embodiments will be described in detail with reference to the accompanying drawings. However, this invention may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the dimensions of layers and regions are exaggerated for clarity of illustration. Like reference numerals refer to like elements throughout.

[0033] figure 1 is a schematic cross-sectional view of a substrate processing apparatus according to an exemplary embodiment, and figure 2 A schematic cross-sectional view to illustrate the interior of a substrate support apparatus according to an exemplary embodiment.

[0034] see figure 1 and 2 , the substrate processing apparatus according to an exemplary embodiment includes: a chamber (100) throu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The present invention relates to a substrate processing apparatus comprising: a chamber allowing a substrate to enter and exit on one side thereof and having a first space therein; an inner chamber arranged in the first space inside the chamber and having a second space therein; a substrate support, arranged in the interior of the inner chamber, for supporting the substrate; and a gas sprayer for spraying gas on the substrate support, wherein the inner chamber comprises: a first body fixed on the upper part of the interior of the chamber; a second body arranged below the first body, being capable of moving vertically and having an exhaust hole in the central part of the bottom surface thereof; and an exhaust body connected to the exhaust hole and having a gas exhaust path in the interior thereof.

Description

technical field [0001] The present invention relates to a substrate supporting device, and more particularly to a substrate processing device capable of uniformly and symmetrically adjusting environmental or process variables in a substrate processing space. Background technique [0002] Various electronic devices such as semiconductor memories are manufactured by stacking various thin films. That is, various thin films are formed on a substrate, and the formed thin films are patterned by using a photolithography process to form a device structure. [0003] Films can be classified into conductive films, dielectric films, and insulating films according to their materials, and are manufactured by various methods. Methods for manufacturing thin films can be mainly classified into physical methods and chemical methods. Recently, in order to efficiently manufacture thin films, a method of applying heat to a substrate during a manufacturing process or a method of using plasma is...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205
CPCC23C16/4412C23C16/45565H01L21/205
Inventor 赵国衡
Owner CHARM ENG CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap