Single crystal furnace silicon solution liquid level position detection method and device and adjusting system

Abstract

The invention provides a single crystal furnace silicon solution liquid level position detection method and device and an adjusting system. The method includes the steps that voltage signals are input into the signal input end, wherein the lower end face of the signal input end is located below the liquid level of a silicon solution all the time; by detecting voltage signals at the first measuring end and the second measuring end, the detection state of the voltage signal at the first measuring end and the detection state of the voltage signal at the second measuring end are obtained; according to the detection states of the voltage signals, a detection result indicating whether the liquid level of the silicon solution is in a reasonable position is generated. By means of the conductivity of the silicon solution, after the voltage signals are input to the signal input ends, the detection state of the voltage signal at the first measuring end and the detection state of the voltage signal at the second measuring end are obtained, the liquid level position of the silicon solution is automatically and accurately detected, and accordingly whether the liquid level of the silicon solution is in the reasonable position is precisely judged. The position of a crucible is further correspondingly adjusted, so that the liquid level of the silicon solution is kept in the reasonable position all the time.

Description

technical field [0001] The invention relates to the technical field of single crystal silicon preparation, in particular to a method, device and adjustment system for detecting the liquid level position of a silicon solution in a single crystal furnace. Background technique [0002] In the process of producing single crystal silicon by the Czochralski method, it has to go through multiple stages such as pumping out leak detection, heating the chemical material, seeding, enlarging and turning the shoulder, equalizing, and finishing. Among them, it is necessary to control the liquid surface position of the silicon solution from the beginning of the seeding process, so as to create a suitable temperature field for crystal growth. [0003] In this process, as the silicon single crystal rod continues to grow, the liquid level of the silicon solution will decrease. At this time, the crucible lifting system needs to be adjusted to keep the liquid level constant. In the existing co...

AI Technical Summary

Problems solved by technology

[0004] The invention provides a method and device for detecting the liquid level position of a silicon solution in a single crystal furnace to solve the problem that the liquid level position of the silicon solution cannot be automatically and accurately detected in the prior art

[0005] The present invention also provides a single crystal furnace silicon solution level position adjustment system to solve the problem in the prior art that the silicon solution level cannot be accurately adjusted to a reasonable position

Images