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LED wafer splitting method

A wafer and cleaving knife technology is applied in the field of LED wafer production and fabrication, which can solve the problems of reducing the quality and pass rate of the splitting fabrication process, unsatisfactory LED wafer splitting yield, and difference in thickness uniformity, etc. Achieve the effect of improving the yield of the split process, increasing the probability of coincidence, and improving the accuracy

Active Publication Date: 2016-08-03
YANGZHOU CHANGELIGHT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The defect of the above process is: during the splitting process, the white film adhered to the LED wafer will gradually deform and then relax under the force of the splitting knife, so that the splitting knife and the cutting line of the LED wafer will gradually deviate to generate splitting dislocations. As a result, the split chip will be scrapped due to dislocations, reducing the quality and pass rate of the split manufacturing process.
However, due to the difference in the uniformity of the thickness of the LED wafer itself, the position of the cutting line in the local area and the splitting position do not coincide during the splitting process of the LED wafer, resulting in problems such as twin crystals and oblique splitting. Yield rate is still not ideal, in view of the deficiencies of the above process, it is urgent to find an effective improvement method

Method used

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  • LED wafer splitting method

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example 1

[0016] Such as figure 1 As shown, first, the back of the LED wafer 100 is adhered to the white film 101 with a tension ring on the outer periphery, placed in a laser scribing machine, and laser scribing is performed on the front of the LED wafer, and a line with a depth of about The overall thickness is 1 / 5~1 / 3, and the opening width is about 10~14um. The cutting line is about 10~14um, and the cutting positions of the two cutting lines on the front and back must coincide), after laser scribing, clean it together with the white film 101. After cleaning, attach a layer of ordinary white film 101 to the front of the LED wafer, place the wafer in the working area of ​​the splitter workbench 104, and use the laser thickness scanning device 105 to measure the thickness of the LED wafer. Move the laser thickness scanning device 105 above the workbench, take the working area of ​​the breaker workbench as the base point and perform a thickness reset (thickness zero point), scan the th...

example 2

[0022] First, stick the back of the LED wafer 100 on a layer of ordinary white film 101, place it in a laser scribing machine, and perform laser scribing on the front of the LED wafer, and draw a line with a depth of about 1 / 5~ of the overall thickness of the wafer. 1 / 3, the cutting line with an opening width of about 10~14um (or draw a line on the front and back of the LED wafer with a depth of about 1 / 5~1 / 3 of the overall thickness of the wafer, and an opening width of about 10~14um cutting line, and the cutting positions of the two cutting lines on the front and back must coincide), after laser scribing, clean together with the white film 101. After cleaning, attach the white film 101 with a tension ring on the front of the LED wafer, place the wafer in the working area of ​​the splitter workbench 104, and use the laser thickness scanning device 105 to measure the thickness of the LED wafer. Move the laser thickness scanning device 105 above the workbench, take the working ...

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Abstract

An LED wafer splitting method belongs to the technical field of semiconductors. A white film with a tensioning ring at the periphery is adopted, and that the white film moves and directly affects the precision of the cutting position during splitting is ensured to a large extent. A floating pressure plate moving along with a splitting cutter sleeves the periphery of the splitting cutter, so that local deformation of the white film is controlled effectively, and the precision of the cutting position of splitting is improved directly. The thickness of an LED wafer and the thickness of a white film on the front of the LED wafer are scanned using a laser thickness scanning device, and then, the scanned thickness data is transmitted to a splitter master control program in order to control the splitting depth of the splitting cutter. The thickness error of the LED wafer and the white film is overcome effectively, and all splitting actions are precise. The yield of the LED wafer splitting process is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a production process of LED wafers. Background technique [0002] The LED wafer splitting method is to use laser scribing in the post-process after the wafer is patterned and the electrode is produced through the pre-process, and then the LED wafer is split into thousands or tens of thousands of single dies by splitting technology. (chip), the LED laser scribing process mainly includes laser scribing and splitting. [0003] At present, the laser scribing technology commonly used in the LED industry is: use a laser scribing machine to draw a cutting line with a depth of about 1 / 5 to 1 / 3 of the overall thickness of the wafer and an opening width of about 10 to 14 μm on the front of the LED wafer. (Or draw a cutting line on the front and back of the LED wafer with a depth of about 1 / 5 to 1 / 3 of the overall thickness of the wafer and an opening width of about 10 t...

Claims

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Application Information

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IPC IPC(8): H01L21/78H01L33/00B28D5/04B28D7/00
CPCB28D5/0058B28D5/04H01L21/78H01L33/0095
Inventor 肖和平陈亮曹来志马祥柱杨凯
Owner YANGZHOU CHANGELIGHT