Inverted Blue Quantum Dot Thin Film Electroluminescent Device

Abstract

The invention discloses an inverted blue light quantum dot film electroluminescent device, which comprises a substrate, a cathode, an electron transport layer, a blue light quantum dot luminescent layer, a hole transport layer and an anode stacked in sequence. The hole transport layer includes a stacked first hole transport layer and a second hole transport layer. The thickness of the first hole transport layer is 5nm˜15nm. The HOMO energy level of the first hole transport layer is greater than the HOMO energy level of the second hole transport layer, thereby forming a step barrier between the blue light quantum dot light-emitting layer and the anode, so as to gradually increase the hole injection of the hole transport layer Ability to meet the hole injection requirements of blue light quantum dot thin film electroluminescent devices.

Description

technical field

[0001] The invention relates to the technical field of light-emitting devices, in particular to an electroluminescent device with an inverted blue quantum dot thin film. Background technique

[0002] Quantum dots (QDs, quantum dots) are some extremely small semiconductor nanocrystals that cannot be seen by the naked eye, and the particle size is generally less than 10nm. When stimulated by light or electricity, quantum dots can emit colored light. The color of light is determined by the composition, material, size and shape of quantum dots. This feature enables quantum dots to change the color of light emitted by the light source. Because electrons, holes, and excitons are quantum-confined in the three-dimensional direction, the energy band structure of QDs changes from a bulk continuous structure to a discrete energy level structure with molecular characteristics. When the particle size of QDs is equal to or smaller than the Bohr radius of Wannier excitons ...

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