Light-emitting enhancement type electron beam pumping ultraviolet light source and preparation method thereof

An ultraviolet light source, electron beam technology, applied in excitation methods/devices, circuits, lasers, etc., can solve problems such as low output light power, and achieve the effects of solving uniformity, improving light extraction efficiency, and low cost

Active Publication Date: 2016-08-10
PEKING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Most electron beam pumped UV light sour

Method used

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  • Light-emitting enhancement type electron beam pumping ultraviolet light source and preparation method thereof
  • Light-emitting enhancement type electron beam pumping ultraviolet light source and preparation method thereof
  • Light-emitting enhancement type electron beam pumping ultraviolet light source and preparation method thereof

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Embodiment Construction

[0033] In the following, the present invention will be further explained through specific embodiments in conjunction with the drawings.

[0034] Such as figure 1 As shown, the light-emitting enhanced electron beam pumped ultraviolet light source of this embodiment includes: a substrate 1, an epitaxial layer 2, a grid-shaped reflective layer 3, an electron beam pump source 4, and a light emitting window 5; wherein, the back of the epitaxial layer Formed on the substrate 1, the epitaxial layer includes a template material 21, a buffer layer 22 and a multiple quantum well 23 in turn from the back to the front, such as figure 2 Shown; on the front surface of the epitaxial layer 2 is carved with periodic grid-like scratches 31, the scratches deep into the substrate 1; on the unscratched surface and the scratched surface vapor deposition of a uniform high-reflective metal film, A grid-like reflective layer 3 is formed with a concave surface 32 at the scratches; a light-emitting window ...

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Abstract

The invention discloses a light-emitting enhancement type electron beam pumping ultraviolet light source and a preparation method thereof. According to the light-emitting enhancement type electron beam pumping ultraviolet light source and the preparation method thereof, multiple quantum wells of an epitaxial layer serve as an active region, a potential well adopts digital alloy of a monoatomic layer or a subatomic layer, carrier localization can be improved, non-radiative recombination process can be inhibited, and internal quantum efficiency can be further improved; a latticed reflecting layer with a concave surface is formed by utilizing periodic grid scratches and evaporating a highly-reflective metal thin film, reflection of ultraviolet light can be enhanced, and the light extraction efficiency can be increased; an electron beam pumping source adopts a field emission electron beam, and the miniaturization and low cost of the field emission electron beam are conductive to commercialization of the electron beam pumping source; meanwhile, the electron beam pumping source is equipped with a metal gate, is much easier in control of cathode accelerated current, and can effectively solve the problem of electron emission uniformity.

Description

Technical field [0001] The invention relates to electron beam pumping ultraviolet light source technology, in particular to a light-emitting enhanced electron beam pumping ultraviolet light source and a preparation method thereof. Background technique [0002] The solid-state ultraviolet light source has great application value in the fields of sterilization and disinfection, ultraviolet curing, biochemical detection, non-line-of-sight communication and special lighting. Especially in recent years, the industry's demand for ultraviolet light sources has gradually shifted to the mid-ultraviolet and deep ultraviolet bands. At the same time, higher requirements have been placed on the output power and efficiency of ultraviolet light sources. [0003] The third-generation semiconductor material has a wide direct band gap, and its forbidden band width is continuously adjustable in a wide range. Al(Ga)N material covers all bands of UVA, UVB, and UVC, and can achieve the shortest waveleng...

Claims

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Application Information

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IPC IPC(8): H01S5/04H01S5/028H01S5/34H01S5/343
CPCH01S5/028H01S5/04H01S5/34H01S5/34333
Inventor 王新强王钇心刘双龙荣新王平秦志新童玉珍许福军沈波
Owner PEKING UNIV
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