Production process of metal substrate with ion-plating black film layer and its metal substrate

Abstract

The invention discloses a production process of a metal matrix with an IP black film layer and the metal matrix thereof. The process includes the steps of introducing argon serving as working gas into a coating chamber at first, sputtering a chrome-silicon film layer on the surface of the metal matrix through an intermediate frequency magnetron sputtering method, and then enabling ions ionized from the chrome-silicon layer formed through sputtering in the intermediate frequency sputtering procedure to react with carbon ions ionized from acetylene to generate chromium carbide and silicon carbide. By the adoption of the intermediate frequency magnetron coating mode, the phenomenon that an anode disappears in common direct current reaction magnetron sputtering is avoided, and therefore the sputtering procedure is conducted stably. The chrome-silicon film layer enables the surface of the workpiece to be covered with the chrome-silicon mixture, the film layer is compact, uniform and high in binding force, and the abrasion resistance of the product is guaranteed. The ions ionized from chrome and silicon in the intermediate frequency sputtering procedure react with the carbon ions ionized from the reactant gas acetylene to generate the chromium carbide and the silicon carbide which are black in color, namely the IP black film layer is formed, the film layer is bright in color and luster, and the abrasion resistance is high.

Description

technical field [0001] The invention relates to the technical field of magnetron sputtering micro-nano films, in particular to a production process of a metal substrate with an ion-plated black film layer and the metal substrate. Background technique [0002] Magnetron sputtering means that when an object is hit by ions, it is sputtered and scattered, and the sputtered object is attached to the target substrate to form a thin film, such as the electrode of a fluorescent lamp is sputtered and attached to the surrounding to form a sputtering phenomenon. To make this sputtering film, at least a substrate with a thin film and a prop (internal mechanism) for maintaining a vacuum state are required. This prop is a production space, and a vacuum pump is used to pump out the gas in the production space. [0003] In intermediate frequency reactive sputtering, when the voltage applied to the target is in the negative half cycle, the target surface is sputtered by positive ions; while ...

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Problems solved by technology

However, under a certain working field strength, the higher the frequency, the shorter the time for the positive ions in the plasma to be accelerated, the less energy the positive electric field absorbs from the external electric field, the lower the energy of the positive ions bombarding the target, and the lower the sputtering rate of the target. reduce

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