GaN Growth Method Based on Black Phosphorus and Magnetron Sputtering AlN

Abstract

The invention discloses a gallium nitride growth method based on black phosphorus and magnetron sputtering aluminum nitride. The method is mainly used for improving the quality of gallium nitride material. The growth step is as follows: (1) preparing a black phosphorous transition layer; (2) a magnetron sputtering aluminum nitride transition layer; (3) thermally treating; (4) growing an aluminum nitride buffer layer; (5) growing a low V-III ratio gallium nitride layer; (6) growing a high V-III ratio gallium nitride layer. The gallium nitride film disclosed by the invention has the advantages that the black phosphorus and magnetron sputtering aluminum nitride are combined, the material is excellent in quality, the applicable substrate range is large, and the gallium nitride film can be used for manufacturing high-performance gallium nitride-based device.

Description

technical field [0001] The invention belongs to the field of electronic technology, and further relates to a gallium nitride growth method based on black phosphorus and magnetron sputtering aluminum nitride in the field of microelectronic technology. The invention can be used for making gallium nitride thin films and devices thereof. Background technique [0002] The third-generation semiconductors represented by gallium nitride have the advantages of large band gap, high breakdown field strength, high thermal conductivity, corrosion resistance and radiation resistance, and are widely used in optoelectronic devices and electronic devices. Recent progress in the growth of GaN-based materials on silicon substrates and their device applications has attracted great attention. However, the following problems exist in the matching of silicon substrate and gallium nitride: (1) large lattice mismatch; (2) large thermal expansion coefficient mismatch. These will lead to high defect...

AI Technical Summary

Problems solved by technology

However, the matching of silicon substrate and gallium nitride has the following problems: (1) has a large lattice mismatch; (2) has a large thermal expansion coefficient mismatch

However, the disadvantages of this method are: 1. The subsequent growth of GaN requires a high temperature above 1000°C, and graphene has poor thermal stability, and it will decompose at high temperature to generate carbon impurities, resulting in unintentional doping

2. The thickness of graphene is very thin, it is difficult to effectively alleviate the lattice mismatch between the substrate and gallium nitride, which greatly limits the selection range of substrates

However, the shortcomings of this method are: 1. Graphene is easy to decompose at high temperature to produce a large amount of C impurities, and the direct growth of GaN will make the impurities diffuse into the material and affect the material quality of GaN

2. The thickness of graphene is very thin, it is difficult to effectively alleviate the lattice mismatch between the substrate and gallium nitride, which greatly limits the selection range of substrates

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