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A dual-channel wide-spectrum detector and preparation method thereof

A wide-spectrum and detector technology, applied in the field of dual-channel wide-spectrum detectors and their preparation, can solve the problems of increased cost, unfavorable convenience and the like, and achieve the effect of improving collection efficiency

Active Publication Date: 2017-11-03
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI +1
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  • Application Information

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Problems solved by technology

But this not only increases the cost, but also is not conducive to the convenience in use.

Method used

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  • A dual-channel wide-spectrum detector and preparation method thereof
  • A dual-channel wide-spectrum detector and preparation method thereof

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Embodiment Construction

[0019] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0020] An embodiment of the present invention provides a dual-channel wide-spectrum detector, such as figure 1 As shown, the dual-channel wide-spectrum detector includes a substrate 1, and a lower electrode contact layer 2, a first absorption layer 3, a middle electrode contact layer 4, an isolation layer 5, and a second absorption layer arranged on the substrate 1 in sequence. Layer 6, upper electrode contact layer 7. Wherein, the upper electrode 8 , the middle electrode 9 , and the bottom electrode 10 are electrically connected to the upper electrode contact layer 7 , the middle electrode contact layer 4 , and the upper electrode contact layer 2 respectively. The structure of N-I-P-P-I-N is adopted, and the upper-middl...

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Abstract

The invention discloses a double-channel wide spectrum detector and a manufacturing method thereof. The double-channel wide spectrum detector comprises a substrate and a table structure; the table structure comprises a lower electrode contact layer, a first absorption layer, a middle electrode contact layer, an isolation layer, a second absorption layer and an upper electrode contact layer superposed on the substrate in sequence, wherein an upper table surface is formed at the top of the upper electrode contact layer, a middle table surface is formed on the middle electrode contact layer, and a lower table surface is formed on the lower electrode contact layer; the upper electrode, the middle electrode and the bottom electrode are arranged on the upper table surface, the middle table surface and the lower table surface and electrically connected with the upper electrode contact layer, the middle electrode contact layer and the lower electrode contact layer respectively. The double-channel wide spectrum detector can be used for wide spectrum detection.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a dual-channel wide-spectrum detector and a preparation method thereof. Background technique [0002] There are two main types of material systems for existing infrared detectors: mercury cadmium telluride materials and GaSb-based superlattice or quantum wells. For HgCdTe materials, the adjustment of the response spectrum is mainly achieved by the different components of the three materials. Therefore, for materials with the same composition, the response spectrum is also determined and limited to a small spectral range. Moreover, the HgCdTe material also has the disadvantage of inhomogeneity. The superlattice based on GaSb, such as InAs / GaSb II superlattice, mainly utilizes the characteristics that the energy band of the superlattice is easy to adjust, and only by changing the thickness of different layers, it is possible to achieve such a change from short wave to very lo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/11H01L31/0224H01L31/18
CPCH01L31/022408H01L31/11H01L31/184Y02P70/50
Inventor 韩玺徐应强王国伟向伟郝宏玥牛智川
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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