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A quantum dot structure photodetector and its preparation method

A technology of photodetectors and quantum dots, which is applied in the field of photodetectors, can solve problems such as slow response speed and large dark current, and achieve the effects of improving device performance, increasing life, and increasing light response

Active Publication Date: 2020-03-17
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The photodetector has a 7x10 13 The specific detection sensitivity of J, and the switch and device responsivity are high, but there are disadvantages of large dark current and slow response speed

Method used

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  • A quantum dot structure photodetector and its preparation method
  • A quantum dot structure photodetector and its preparation method
  • A quantum dot structure photodetector and its preparation method

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Embodiment Construction

[0020] In order to make the purpose, technical solution and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. For simplicity, some technical features known to those skilled in the art are omitted from the following description.

[0021] like image 3 As shown, the present embodiment provides a method for preparing a photodetector with a quantum dot structure, which is characterized in that it has a highly doped silicon substrate 1 covered with an aluminum oxide dielectric layer 2, comprising the following steps:

[0022] Using detergent, acetone, ethanol and deionized water to ultrasonically clean the highly doped silicon substrate 1 in sequence;

[0023] Transferring the graphene onto the alumina dielectric layer 2 to form a graphene layer 3;

[0024] Spin-coat photoresist on the graphene layer 3, photoresist off the photoresist at the posit...

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Abstract

The present invention relates to the technical field of photodetectors, in particular to a method for preparing a photodetector with a quantum dot structure, which has a highly doped substrate covered with a dielectric layer, comprising the following steps: forming a two-dimensional material layer on the dielectric layer; The quantum dot material layer solution is coated on the surface of the two-dimensional material layer to form the quantum dot material layer; a patterned transparent conductive film is fabricated on the quantum dot material layer to complete device preparation. A voltage-assisted photodetector with a quantum dot structure, which includes a highly doped substrate, a dielectric layer, a two-dimensional material layer, a quantum dot material layer, and a transparent conductive film from bottom to top. The source electrode and the two-dimensional material layer are formed on the two-dimensional material layer. The drain electrode; the two-dimensional material layer is in contact with the quantum dot material layer to form a built-in electric field; an adjustable modulation voltage consistent with the direction of the built-in electric field is applied between the transparent conductive film and the highly doped substrate. The invention can improve the response speed and photocurrent gain of the device, so that the performance of the device can be significantly improved.

Description

technical field [0001] The invention belongs to the technical field of photodetectors, and in particular relates to a voltage-assisted quantum dot structure photodetector. Background technique [0002] Graphene and graphene-like two-dimensional (2D) materials have attracted extensive attention due to their extraordinary electronic and optical properties, which hold great potential for optoelectronic applications such as photodetection. Although the research on graphene and graphene-like two-dimensional materials has made great progress, fundamental and practical problems still hinder the application of graphene and graphene-like two-dimensional materials. [0003] Graphene is a monoatomic layered two-dimensional material in which carbon atoms are arranged in a hexagonal honeycomb lattice and has many attractive electronic, optical, mechanical and thermal properties. The electrons transported in graphene behave as massless Dirac fermions, and there is a linear relationship b...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/48H01L51/46H01L51/42
CPCH10K71/12H10K30/30H10K30/354H10K30/65H10K2102/00Y02E10/549
Inventor 王军韩嘉悦杨明黄泽华苟君
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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