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Photodetector and its preparation method

A photodetector and ultraviolet light technology, which is applied in photosensitive equipment, semiconductor devices, nanotechnology for materials and surface science, etc., can solve the problems of poor stability of two-dimensional nanomaterials, poor performance of photodetectors, and short detection wavelengths and other problems, to achieve the effect of simple and easy operation, good photoelectric detection performance and long service life

Active Publication Date: 2020-08-18
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this kind of photodetector has the following disadvantages: (1) The photodetector based on wide bandgap semiconductor has too short detection wavelength due to the large bandgap; (2) The existing two-dimensional nanomaterials have poor stability, resulting in a (3) The photodetector of the solid module is exposed to the air and has the disadvantage of being easily oxidized

Method used

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  • Photodetector and its preparation method
  • Photodetector and its preparation method
  • Photodetector and its preparation method

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preparation example Construction

[0048] The second aspect of the present invention provides a method for preparing a photodetector, comprising the following steps:

[0049] S01, providing a tellurium raw material, and exfoliating the tellurium raw material by a liquid phase exfoliation method to obtain two-dimensional tellurium nanosheets;

[0050] S02, dispersing the two-dimensional tellurium nanosheets in an organic solvent to form a two-dimensional tellurium nanosheet dispersion, uniformly coating the two-dimensional tellurium nanosheet dispersion on a conductive substrate, and drying to obtain a working electrode;

[0051] S03, providing a counter electrode, injecting an electrolyte solution between the working electrode and the counter electrode, and obtaining a photodetector after packaging.

[0052] In the embodiment of the present invention, in step S01, the tellurium raw material is a two-dimensional non-layered metal tellurium element, such as tellurium powder, or a tellurium block, and there is no ...

Embodiment 1

[0077] A method for preparing two-dimensional tellurium nanosheets, comprising the following steps:

[0078] (1) Add 500mg of tellurium powder into 100ml of isopropanol. Then select the probe ultrasound 240W, ultrasound 10h. The ultrasonic on / off time was selected as 2 / 4s, and the ultrasonic was performed in an ice bath environment. After the probe is sonicated, the water bath is then used for sonication. The ultrasonic power of the water bath is 360W. Ultrasonic time is 8h. The temperature of the water bath was maintained at 10°C;

[0079] (2) After ultrasonication, centrifugation is used to obtain the required two-dimensional tellurium nanosheets. Firstly, a centrifugal force of 2000g is used for 30min. The supernatant was taken, and then the supernatant was centrifuged at 12000g for 30 minutes to obtain a precipitate, which was dried in vacuum to obtain two-dimensional tellurium nanosheets.

[0080] Such as figure 2 Shown is the electron microscope topography of tw...

Embodiment 2

[0084] A method for preparing two-dimensional tellurium nanosheets, comprising the following steps:

[0085] (1) Add 500mg of tellurium powder into 100ml of isopropanol. Then select the probe ultrasound 200W, ultrasound 15h. The ultrasonic on / off time was selected as 2 / 4s, and the ultrasonic was performed in an ice bath environment. After the probe is sonicated, the water bath is then used for sonication. The ultrasonic power of the water bath is 300W. Ultrasonic time is 10h. The temperature of the water bath was maintained at 15°C;

[0086](2) After ultrasonication, centrifugation is used to obtain the required two-dimensional tellurium nanosheets. Firstly, the centrifugal force of 1800g is adopted, and the centrifugation is performed for 35min. The supernatant was taken, and then the supernatant was centrifuged at 15000 g for 25 minutes to obtain a precipitate, which was vacuum-dried to obtain two-dimensional tellurium nanosheets.

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Abstract

Provided in the present invention is an optical detector, comprising a working electrode, a counter electrode, and an electrolytic solution provided between the working electrode and the counter electrode, the working electrode comprising a conductive substrate and a semiconductor layer provided on the conductive substrate, and the material of the semiconductor layer comprising two-dimensional tellurium nanosheets. The optical detector provided in the present invention has good performance. Further provided in the present invention is a manufacturing method for an optical detector, comprising the following steps: providing a tellurium raw material, and exfoliating the tellurium raw material with a liquid phase exfoliation method to obtain two-dimensional tellurium nanosheets; dispersing the two-dimensional tellurium nanosheets into a solvent to form a two-dimensional tellurium nanosheet dispersion, uniformly coating the two-dimensional tellurium nanosheet dispersion onto a conductive substrate, and obtaining a working electrode after drying; and providing a counter electrode, filling an electrolytic solution between the working electrode and the counter electrode, and obtaining an optical detector after encapsulation. The manufacturing method provided in the present invention is simple and easy to operate.

Description

technical field [0001] The invention relates to the field of optoelectronics, in particular to a photodetector and a preparation method thereof. Background technique [0002] Photodetectors are sensors made of materials with photoelectric effects that can realize photoelectric conversion, and their function is to realize photoelectric conversion. The mechanism is that the guided beam injected into the detector causes the stimulated transition of electrons from the valence band to the conduction band to generate photogenerated carriers (electrons and holes). And these carriers are collected by the PN junction or Schottky barrier, and finally manifested as photovoltage or photocurrent. [0003] Currently, photodetectors based on 2D nanomaterials such as black phosphorous are considered to be effective alternatives to current commercial photodetectors. However, this kind of photodetector has the following disadvantages: (1) The photodetector based on wide bandgap semiconducto...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G9/20B82Y30/00
CPCB82Y30/00H01G9/20B82Y15/00H01L31/0256H01L31/035272H01L31/108
Inventor 张晗谢中建邢晨阳
Owner SHENZHEN UNIV
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