Chemical mechanical grinding equipment and method

Abstract

A chemical mechanical polishing equipment and method, wherein the chemical mechanical polishing equipment includes: a slide table; a grinding mechanism, including a grinding piece capable of repeatedly moving along a second linear direction, and the first and second linear directions are perpendicular to each other; a polishing liquid injection mechanism , used to inject grinding liquid into the grinding piece; the grinding and cleaning mechanism is arranged opposite to the grinding mechanism along the first straight line; the film thickness measuring mechanism is used to measure the thickness of the cleaned piece to be ground. During the chemical mechanical grinding process, the moving piece to be ground is ground, cleaned and measured. Use this equipment to measure the thickness of the slices to be ground after grinding in real time, control the grinding amount of the slices to be ground during the grinding process, ensure that the thickness of the slices to be ground after grinding is the target thickness, improve the qualified rate of products, reduce the amount of waste slices, and reduce Cost of production.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a chemical mechanical polishing device and method. Background technique [0002] refer to figure 1 , figure 1 It is a schematic diagram of an existing chemical mechanical polishing equipment, which includes: a rotatable platform 1 ; a polishing pad 2 covering the platform 1 ; a rotatable polishing head 3 and a polishing liquid nozzle 4 . [0003] Taking a silicon wafer as an example, the method of chemical mechanical polishing is as follows: the silicon wafer 5 is turned upside down so that the surface to be polished contacts the grinding pad 2; then the grinding head 3 is pressed on the silicon wafer 5; then, the control platform 1 rotates and the rotation of the grinding head 3, while controlling the grinding fluid nozzle 4 to spray the grinding fluid 40 on the grinding pad 2, and applying downward pressure towards the silicon wafer 5 to the grinding head ...

AI Technical Summary

Problems solved by technology

[0004] Along with the grinding process, the surface of the grinding pad is also gradually worn and uneven during the grinding process. In this way, during the grinding process, for silicon wafers ground under the same pressure and rotation speed, the grinding rate will increase over time. changes, resulting in a decrease in the thickness uniformity of the polished silicon wafer

Since the existing chemical mechanical polishing process lacks an effective method for real-time monitoring of the thickness of the polished silicon wafer, the thickness of the silicon wafer and its changes during the grinding process cannot be obtained in real time, and it cannot be found in time: due to the wear and tear of the grinding pad The thickness uniformity of the polished silicon wafer is significantly reduced. If you continue to use the polishing pad for grinding, a large number of polished silicon wafers will be scrapped and the production output will be reduced.

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