Unlock instant, AI-driven research and patent intelligence for your innovation.

System and method for controlling excess bias of single photon avalanche photo diode

A photodiode and single-photon avalanche technology, applied in control/regulation systems, photometry, measurement circuits, etc., can solve problems such as complex signal processing circuits

Active Publication Date: 2016-10-05
IND TECH RES INST
View PDF5 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0021] The above-mentioned high dynamic range photodetector needs to operate between linear mode and Geiger mode, so the corresponding signal processing circuit will be relatively complicated

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • System and method for controlling excess bias of single photon avalanche photo diode
  • System and method for controlling excess bias of single photon avalanche photo diode
  • System and method for controlling excess bias of single photon avalanche photo diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0089] Please refer to Figure 9A to Figure 9C , which is a schematic diagram of a single photon avalanche photodiode SPAD detection circuit and its related signals. The single photon avalanche photodiode SPAD detection circuit includes: a power supply 310 , a single photon avalanche photodiode SPAD, and a load R. Wherein, the power supply 310 can generate the supply voltage V op ; The cathode terminal of the single photon avalanche photodiode SPAD receives the supply voltage V op , the anode end generates an output voltage signal V in response to receiving photon excitation anode ; The first end of the load is connected to the anode end of the single photon avalanche photodiode SPAD, and the second end of the load is connected to the ground voltage Gnd.

[0090] Assuming that the single photon avalanche photodiode SPAD operates in Geiger mode, the supply voltage V op =V bd +V e , where V bd is the breakdown voltage and V eis the excess bias level. When the single pho...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A system and method for controlling excess bias of a single photon avalanche photo diode (SPAD) is provided. The system includes a power supply, a SPAD, a control circuit and a load. The power supply generates a supply voltage. The SPAD has a first terminal receiving the supply voltage and a second terminal generating an output voltage signal. The control circuit is connected to the second terminal of the SPAD. The load has a first terminal connected to the second terminal of the SPAD, and a second terminal connected to the control circuit for receiving a reset level. The control circuit is capable of monitoring a swing of the output voltage level and generating the reset level in response to the excess bias level and the swing of the output voltage level.

Description

technical field [0001] The disclosure is a diode bias control system and method, and particularly relates to a single photon avalanche photodiode (single photon avalanche photo diode) excess bias control system and method. Background technique [0002] In general, photo detectors can be further divided into general photodiodes (PD for short), avalanche photodiodes (APD for short) and single photon avalanche photodiodes (single photon photodiodes) according to their operating forms. Avalanche photodiode, referred to as SPAD). [0003] Please refer to figure 1 , which is shown as a schematic diagram of the bias voltage operating range of various photodetectors and their optical gain. A general photodiode PD operates in a region with a relatively low reverse bias value, so the optical gain is not high, and one photon excites at most one electron-hole pair. [0004] The avalanche photodiode APD operates in linear mode, and its operating point voltage, or bias voltage, is clos...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G05F1/56
CPCG01J1/44G01J2001/442G01J2001/4466H04N25/773
Inventor 蔡嘉明章博璿郭明清杨子毅
Owner IND TECH RES INST