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A method for rapidly transferring boron nitride thin films using polydimethylsiloxane

A technology of polydimethylsiloxane and boron nitride, which is applied in the fields of chemical instruments and methods, nitrogen compounds, inorganic chemistry, etc., and can solve the problems that boron nitride films are easily polluted, transfer efficiency is low, and are easy to be destroyed. , to achieve the effect of simple and efficient transfer process, low cost and good integrity

Active Publication Date: 2018-04-24
SOUTHEAST UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It is designed to solve the problems of easy contamination, easy damage and low transfer efficiency in the transfer process of the above-mentioned boron nitride film

Method used

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  • A method for rapidly transferring boron nitride thin films using polydimethylsiloxane

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] In the first step, 50 mg of boron nitride powder prepared by the electrochemical-assisted mechanical peeling method is taken and uniformly dispersed in 100 ml of isopropanol.

[0031] In the second step, 1ml of the above dispersion was ultrasonically dispersed in 100ml of deionized water.

[0032] The third step is to use a suction filter bottle to filter the dispersed suspension, use the filter membrane as cellulose acetate, and obtain a boron nitride film (such as figure 1 I).

[0033] In the fourth step, a 100-micron-thick PDMS film is tightly attached to the filter membrane on the side of boron nitride and gently pressed. In this step, the filter membrane is in a wet state (such as figure 1 II).

[0034] The fifth step, after 5 minutes, remove the filter membrane (such as figure 1 II), the boron nitride film transferred to PDMS (such as figure 1 IV).

[0035] It should be noted that the illustrations provided in the embodiments only illustrate the basic idea of ​​the pres...

Embodiment 2

[0037] The preparation method is basically the same as that in Example 1, except that the boron nitride powder is prepared by chemical vapor deposition.

Embodiment 3

[0039] The preparation method is basically the same as in Example 1, except that the boron nitride powder is obtained by mechanical peeling.

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Abstract

The invention discloses a method for quickly transferring boron nitride film by using polydimethylsiloxane. The method comprises the following steps: preparing boron nitride suspension dispersion; ultrasonically dispersing a certain amount of the boron nitride suspension dispersion in deionized water; forming the boron nitride-containing dispersion into a film through suction filtration by using a suction filtering bottle; attaching cured and shaped polydimethylsiloxane (PDMS) transparent film to the boron nitride-containing filter film; after several minutes, removing the filter film to obtain the boron nitride film transferred to PDMS. The method is simple to perform, low in cost and environment-friendly, the boron nitride film is complete in the transfer process and is transferred within a short time, the boron nitride film can be transferred efficiently and stably, and the method has a wide range of uses in the manufacture of transparent electrodes and flexible devices.

Description

Technical field [0001] The invention relates to the field of semiconductor materials, in particular to a method for rapidly transferring a boron nitride film. Background technique [0002] Boron nitride is an artificial synthetic material. Although it was synthesized in the early 19th century, it did not develop into a widely used material until the second half of the 20th century. In recent years, new applications of boron nitride have emerged one after another, and various forms of boron nitride powder, such as nano-sized particles, spherical particles, etc., are constantly being synthesized using new synthesis techniques. For the application of boron nitride in electronic devices and sensors, it is usually necessary to transfer the boron nitride film to an insulating substrate. Especially with the rise of flexible electronic devices, boron nitride as an excellent insulating material often needs to be transferred On the flexible substrate (typically polydimethylsiloxane PDMS)....

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B21/064
CPCC01B21/064
Inventor 孙立涛史智慧万树苏适毕恒昌尹奎波
Owner SOUTHEAST UNIV