MOCVD system and reaction gas conveying device thereof

Abstract

The invention relates to a reaction gas conveying device of an MOCVD system. The reaction gas conveying device is used for reaction gas conveying and uniform distribution control and capable of sequentially guiding a path of reaction gas required by an MOCVD process into a first distribution space arranged in the position, along the circumferential edge, of a spray head, a second distribution space arranged on the inner side of the first distribution space and a plurality of air grooves parallelly distributed in an area defined by the second distribution space. By means of the reaction gas conveying device of the MOCVD system, the path of reaction gas enters from a plurality of air inlet points in the circumferential edge of a cavity cover and is uniformly distributed in the circular-arc direction after being distributed for two times, and then, the reaction gas in the air grooves is conveyed into a reaction cavity through a plurality of air jet openings formed in a body of each air groove or at least one fine seam. The reaction gas conveying device of the MOCVD system is easy to machine, high in reliability and capable of achieving uniform distribution of the reaction gas on the surfaces of epitaxial wafers.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a MOCVD (metal organic chemical vapor deposition) system for producing compound semiconductor optoelectronic devices, and a system for controlling the distribution and flow of gases participating in the reaction in the MOCVD process reaction chamber Reactive gas delivery device. Background technique [0002] Metal organic chemical vapor deposition system (hereinafter referred to as MOCVD system) is the core equipment used to produce semiconductor optoelectronic devices such as LED devices. During the epitaxial reaction process, the reaction gas is introduced into the reaction chamber from the gas source through the reaction gas delivery device, so that the epitaxial wafer placed in the reaction chamber can be epitaxially grown to form a lattice structure film. [0003] In order to effectively control the high-temperature chemical reaction process of the above-mentioned ep...

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Problems solved by technology

However, due to the centrifugal force generated by the high-speed rotation of the tray, many under-reacted gases and gases that have not yet participated in the reaction are quickly discharged together, resulting in a large increase in the consumption of reaction gases. Therefore, in large-scale production, the production of substrate epitaxy is increased. cost

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