MOCVD system and reaction gas conveying device thereof

A technology of reactive gas and conveying device, which is applied in directions from chemical reactive gas, crystal growth, gaseous chemical plating, etc., can solve the problems of increasing the cost of substrate epitaxy, increasing the consumption of reactive gas, etc., and achieves low cost and easy manufacturing. Processing, high reliability effect

Active Publication Date: 2016-10-12
TANG OPTOELECTRONICS EQUIPMENT (SHANGHAI) CORPORATION LIMITED
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the centrifugal force generated by the high-speed rotation of the tray, many under-reacted gases and gases that have not yet participated in the reaction are quick...

Method used

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  • MOCVD system and reaction gas conveying device thereof
  • MOCVD system and reaction gas conveying device thereof
  • MOCVD system and reaction gas conveying device thereof

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Embodiment Construction

[0046] Embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0047] An embodiment of the present invention provides a reaction gas delivery device for an MOCVD system, which is used for reaction gas delivery and uniform distribution control. Such as figure 1 As shown, the MOCVD system includes a reaction chamber 100, a chamber cover 200 located at the top of the reaction chamber 100, a reaction gas delivery device located below the chamber cover 200, and an epitaxial wafer 600 located below the reaction gas delivery device in the reaction chamber 100. (or substrate) tray 500. Other equipment such as the heater of the tray 500, the central shaft supporting and driving the tray 500 to rotate, etc., can be equipped according to actual application conditions, and will not be listed here. The reaction gas conveying device in this embodiment is used to introduce at least two routes of reaction gases required for epi...

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Abstract

The invention relates to a reaction gas conveying device of an MOCVD system. The reaction gas conveying device is used for reaction gas conveying and uniform distribution control and capable of sequentially guiding a path of reaction gas required by an MOCVD process into a first distribution space arranged in the position, along the circumferential edge, of a spray head, a second distribution space arranged on the inner side of the first distribution space and a plurality of air grooves parallelly distributed in an area defined by the second distribution space. By means of the reaction gas conveying device of the MOCVD system, the path of reaction gas enters from a plurality of air inlet points in the circumferential edge of a cavity cover and is uniformly distributed in the circular-arc direction after being distributed for two times, and then, the reaction gas in the air grooves is conveyed into a reaction cavity through a plurality of air jet openings formed in a body of each air groove or at least one fine seam. The reaction gas conveying device of the MOCVD system is easy to machine, high in reliability and capable of achieving uniform distribution of the reaction gas on the surfaces of epitaxial wafers.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a MOCVD (metal organic chemical vapor deposition) system for producing compound semiconductor optoelectronic devices, and a system for controlling the distribution and flow of gases participating in the reaction in the MOCVD process reaction chamber Reactive gas delivery device. Background technique [0002] Metal organic chemical vapor deposition system (hereinafter referred to as MOCVD system) is the core equipment used to produce semiconductor optoelectronic devices such as LED devices. During the epitaxial reaction process, the reaction gas is introduced into the reaction chamber from the gas source through the reaction gas delivery device, so that the epitaxial wafer placed in the reaction chamber can be epitaxially grown to form a lattice structure film. [0003] In order to effectively control the high-temperature chemical reaction process of the above-mentioned ep...

Claims

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Application Information

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IPC IPC(8): C23C16/455C30B25/14
Inventor 陈爱华张伟金小亮吕青徐春阳陈凯辉
Owner TANG OPTOELECTRONICS EQUIPMENT (SHANGHAI) CORPORATION LIMITED
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