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Device for measuring photoelectron emission rate on satellite material surface and method using the same

A measuring device, optoelectronic technology, applied in the direction of measuring device, analyzing materials, material analysis through optical means, etc., to achieve the effect of feasible conditions

Inactive Publication Date: 2016-10-19
NAT SPACE SCI CENT CAS
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Problems solved by technology

[0004] The object of the present invention is, in order to solve the measurement problem of the photoelectron emissivity of the material surface of the existing satellite surface charge protection, provide a kind of photoelectron emissivity measurement device and using method of the satellite material surface

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  • Device for measuring photoelectron emission rate on satellite material surface and method using the same
  • Device for measuring photoelectron emission rate on satellite material surface and method using the same
  • Device for measuring photoelectron emission rate on satellite material surface and method using the same

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Embodiment Construction

[0034] The device for measuring the secondary electron emission rate of the surface of the satellite material and the method of use thereof of the present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0035] figure 1 It is a structural schematic diagram of a measuring device for secondary electron emission rate on the surface of a satellite material according to the present invention. As shown in the figure, the measuring device includes an ultraviolet light source 1 , a vacuum tank 7 , a turntable 6 , an electronic detector 3 and a console 13 . The ultraviolet light source 1 is used to output ultraviolet light beams required in the measurement process. The vacuum tank 7 provides a vacuum chamber space for the measurement process. The turntable 6 is installed at the bottom of the vacuum tank 7, and is used to provide a proper matching position for the material sample 4 to be tested, the electronic detector 3 and ...

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Abstract

The invention provides a device for measuring photoelectron emission rate and a method using the same. The measuring device comprises a UV light source, a vacuum tank, a turntable, an electronic detector and a console. The UV light source is used for outputting the ultraviolet beam required in the measurement process; the vacuum tank is used for providing vacuum chamber space for the test; the turntable is arrange in the bottom of the vacuum tank, and used to provide proper position for material sample to be tested, electronic detector and beam; the electronic detector is used for measuring photoelectron emission intensity on the material surface; the console is used for acquiring data of ultraviolet source and electronic detector and controlling the potential of the material sample to be tested.

Description

technical field [0001] The invention relates to the field of space radiation protection evaluation, in particular to a device for measuring photoelectron emissivity on the surface of satellite materials by using ultraviolet light and a method for using the same. Background technique [0002] Due to the attachment of space plasma, the satellite surface will form a surface charging phenomenon similar to the electrostatic charging on the ground. Surface charging creates a potential difference between the satellite and the space environment, which is the floating potential on the surface of the satellite. When there is an excessive potential difference between the surface of the satellite and the space environment, a high voltage of minus 20,000 volts can be caused on the satellite in geostationary orbit, which will cause a discharge phenomenon between the surface of the satellite and the space environment or between different parts of the surface (i.e. Such as electrostatic di...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/00
Inventor 杨垂柏关燚炳孔令高张珅毅张斌全荆涛曹光伟梁金宝
Owner NAT SPACE SCI CENT CAS
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