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A growth process for yag crystal

A crystal and process technology, applied in the field of laser crystal growth technology, can solve the problems of short effective use length of crystals, crystal dislocation scattering, long growth period, etc. Effect

Active Publication Date: 2019-02-01
成都新源汇博光电科技有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the existing crystal growth process has defects such as too long growth cycle, large power consumption, short effective use length of the crystal, and prone to dislocation scattering inside the crystal, which urgently need to be solved by technicians.

Method used

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  • A growth process for yag crystal
  • A growth process for yag crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] A kind of growth technique for YAG crystal, comprises the following steps:

[0029] Step 1. Select a non-defective crystal head, and start vacuuming the resistance furnace with YAG raw materials to 6×10 -3 Pa, and then fill the resistance furnace with a protective gas, the protective gas is a mixture of argon and carbon dioxide, the filling method is to first fill the furnace with argon, so that the pressure in the furnace is 20KPa, and then fill Inject 4KPa of carbon dioxide gas;

[0030] Step 2. After step 1 is completed, heat up the material, control the heating rate at 388°C / h, and raise the temperature to 1975°C;

[0031] Step 3. Preheat the selected non-defective crystal heads to 1820°C for standby;

[0032] Step 4. After the YAG raw material in the resistance furnace is completely melted, homogenize at a constant temperature for 4 hours;

[0033] After step 5 and step 4 are completed, lower the preheated crystal head to contact the raw material solution and st...

Embodiment 2

[0040] Embodiment two is the same as embodiment one, and its difference is that the growth process of YAG crystal growth comprises the following steps:

[0041] Step 1. Select a non-defective crystal head, and start vacuuming the resistance furnace with YAG raw materials to 6×10 -3 Pa, and then fill the resistance furnace with a protective gas, the protective gas is a mixture of argon and carbon dioxide, the filling method is to fill the furnace with argon first, so that the pressure in the furnace is 23KPa, and then fill Inject 4.5KPa of carbon dioxide gas;

[0042] Step 2. After step 1 is completed, heat up the material, control the heating rate at 390°C / h, and raise the temperature to 1970°C;

[0043] Step 3. Preheat the selected non-defective crystal head to 1800°C for standby;

[0044] Step 4. After the YAG raw material in the resistance furnace is completely melted, homogenize at a constant temperature for 5 hours;

[0045] After step 5 and step 4 are completed, lower...

Embodiment 3

[0050] Embodiment three is the same as embodiment one and embodiment two, and its difference is that, the growth technique of YAG crystal comprises the following steps:

[0051] Step 1. Select a non-defective crystal head, and start vacuuming the resistance furnace with YAG raw materials to 6×10 -3 Pa, and then fill the resistance furnace with a protective gas, the protective gas is a mixture of argon and carbon dioxide, the filling method is to first fill the furnace with argon, so that the pressure in the furnace is 22KPa, and then fill Inject 4KPa of carbon dioxide gas;

[0052] Step 2. After step 1 is completed, heat up the material, control the heating rate at 380°C / h, and raise the temperature to 1990°C;

[0053] Step 3. Preheat the selected non-defective crystal head to 1850°C for standby;

[0054] Step 4. After the YAG raw material in the resistance furnace is completely melted, homogenize at a constant temperature for 3 hours;

[0055] After step 5 and step 4 are com...

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Abstract

The invention discloses a growth technique for YAG crystal. The technique comprises the following steps: 1) selecting defect-free crystal head, starting to vacuumize a resistance furnace filled with YAG raw materials, and then filling protective gas into the resistance furnace and increasing temperature for melting materials; 2) preheating the crystal head and standing by; 3) homogenizing for 3-5h at constant temperature after the YAG raw materials in the resistance furnace are fully fused; 4) after completing the step 3, descending the crystal head to be in contact with the raw material solution, and then starting to adjust temperature and overturn, and keeping constant temperature; 5) after completing the step 4, starting to pull and perform planar interface isometric growth; 6) blowing out after the crystal grows to a preset length, lifting the crystal, keeping constant temperature for 0-2h, and cooling to room temperature with the furnace; 7) taking out the crystal from the furnace after the crystal is cooled to room temperature. According to the growth technique provided by the invention, the growth period of the crystal is effectively shortened, the effective use length of the crystal is increased for about 15%, the dislocation defect of the crystal is effectively controlled and the blank crystal is a superior product free from the defects of dislocation, scattering, and the like.

Description

technical field [0001] The invention relates to the field of laser crystal growth technology, in particular to a growth technology for YAG crystal. Background technique [0002] At present, the main stages of crystal growth in resistance furnaces are divided into ① Furnace loading ② Vacuuming and aeration ③ Heating material ④ Seeding ⑤ Shoulder ⑥ Convex interface equal diameter ⑦ Turning ⑧ Flat interface equal diameter ⑨ Stop pulling and cooling ⑩ Furnace cleaning, its growth The period is about 140h. Since there are often inclusions and polycrystalline crystals during the growth process of the crystal head, if the position is reversed again, the crystals that just meet the inclusions and the flat interface of the polycrystalline crystal will appear accompanied by dislocations, which will cause the growth The crystals that come out have defects. Therefore, the existing crystal growth process has defects such as too long growth cycle, large power consumption, short effective...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/28C30B15/00
CPCC30B15/00C30B29/28
Inventor 王大庆
Owner 成都新源汇博光电科技有限公司
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