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Preparation method of photomask and black photoresist spacer layer

A black photoresist and photomask technology, used in the field of liquid crystal display panel preparation, can solve the problems of liquid crystal bubbles, poor liquid crystal fluidity, and only about 1um in size, to avoid bubbles, reduce height, and improve production yield Effect

Active Publication Date: 2020-02-07
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The three-stage difference black photoresist spacer theoretically needs to rely on the different light transmittance of the photomask to cause different reactions of the photoresist material to form a stage difference. However, due to material and technical limitations, the current black matrix and the main photoresist spacer layer The maximum step difference can only be about 1um. For example, the height of the main photoresist spacer layer is about 3um, and the height of the black matrix is ​​about 2um.
If both the long and short sides of the pixel are shielded with the aforementioned photomask, the height of the black matrix around the pixel is too high, resulting in poor fluidity of liquid crystal in the liquid crystal display panel, causing liquid crystal bubbles, resulting in low product yield of the liquid crystal display panel

Method used

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  • Preparation method of photomask and black photoresist spacer layer
  • Preparation method of photomask and black photoresist spacer layer
  • Preparation method of photomask and black photoresist spacer layer

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Embodiment Construction

[0030] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0031] In addition, the following descriptions of the various embodiments refer to the attached drawings to illustrate specific embodiments in which the present invention can be implemented. The directional terms mentioned in the present invention, for example, "upper", "lower", "front", "rear", "left", "right", "inner", "outer", "side", etc., only is to refer to the direction of the attached drawings. Therefore, the direction terms used are for better and more cle...

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Abstract

The invention discloses a photomask used for manufacturing a black photo spacer. The photomask comprises a transparent substrate and a sun-shading layer which is formed on the substrate, wherein a first gap is formed in the light-shading layer; and the first gap is 2-5-micron in width. The photomask provided by the invention can be used for manufacturing the black photo spacer of a liquid crystal display panel, so that the liquid crystal display panel is relatively high in product yield. The invention also discloses a manufacturing method for the black photo spacer.

Description

technical field [0001] The invention relates to a liquid crystal display panel preparation technology, in particular to a photomask and a method for preparing a black photoresist spacer layer. Background technique [0002] In order to increase the aperture ratio of the liquid crystal display panel and reduce the production cost, the current array substrate adopts the black photo spacer (Black Photo Spacer, BPS) technology to combine the black matrix (Black Matrix, BM) and the photo spacer (PhotoSpacer, PS) with Made by a photolithography process. [0003] The three-stage black photoresist spacer layer theoretically needs to rely on the different light transmittance of the photomask to cause different reactions of the photoresist material to form a stage difference. However, due to material and technical limitations, the black matrix and the main photoresist spacer layer currently The maximum step difference can only be about 1um. For example, the height of the main photores...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/32G02F1/1362
CPCG02F1/136209G03F1/32
Inventor 叶成亮
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD