Electrothermal integration analysis method of mesfet under the action of high power electromagnetic pulse

Abstract

The invention discloses an electric-heat integrated analysis method for a MESFET under the action of high-power electromagnetic pulses. The method comprises the steps that a drifting-diffusing equation set is solved by taking the electronic quasi Fermi potential, the hole quasi Fermi potential and the electric potential as variables and adopting a time domain spectral-element method to solve the instaneous quasi Fermi potential and electric potential of the metal-semiconductor field effect tube (MESFET) under the action of the high-power pulses, and then the electric field intensity and the current density at the moment are obtained; temperature distribution of all positions at the moment can be obtained under the action of a joule heat source by considering the influences of ambient environment temperature and heat convection; the carrier mobility and the generation-recombination rate are updated according to temperature changes, electric field distribution is recalculated, the steps are repeatedly conducted until the drifting-diffusing equation set meets the convergence precision, and electric field distribution and heat distribution at the moment are to-be-solved electric-heat distribution inside the MESFET at the moment. The method is achieved on the basis of a MESFET physical model, and the distribution conditions, changing along with time, of an electric field and the temperature in a device under the action of the high-power electromagnetic pulses can be clearly obtained.

Description

technical field [0001] The invention belongs to the transient electrothermal effect analysis of semiconductor devices, in particular to a numerical analysis method designed for MESFET. Background technique [0002] With the rapid development of semiconductor device technology, people's research on semiconductor devices continues to deepen. After silicon materials, compound semiconductor materials gallium arsenide (GaAs) and indium phosphide (InP) have become important electronic basic materials due to their excellent characteristics, especially GaAs has become one of the most important microelectronic materials. In addition to the continuous updating of new semiconductor materials, semiconductor process technology is also constantly improving. Metal-semiconductor field effect transistors (MESFETs) with excellent electrical properties are widely used in engineering practice. [0003] An electromagnetic pulse is a transient electromagnetic phenomenon. After the high-power el...

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Problems solved by technology

However, due to the Yee grid characteristics of FDTD, it is limited when simulating models with complex structures.

When FEM is applied to the time domain, each time step involves the solution of linear equations, the amount of calculation is very large, and it is a waste of time

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