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Electrothermal integration analysis method of pin limiter under the action of high power electromagnetic pulse

An electromagnetic pulse and analysis method technology, applied in the field of electrothermal integration analysis, can solve the problems of huge calculation amount, inability to simulate, waste of time, etc., and achieve the effect of flexible modeling and convenient division.

Active Publication Date: 2020-04-21
NANJING UNIV OF SCI & TECH
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Problems solved by technology

However, due to the Yee grid characteristics of FDTD, it cannot simulate the model with complex structure.
When FEM is applied to the time domain, each time step involves the solution of linear equations, the amount of calculation is very large, and it is a waste of time

Method used

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  • Electrothermal integration analysis method of pin limiter under the action of high power electromagnetic pulse
  • Electrothermal integration analysis method of pin limiter under the action of high power electromagnetic pulse
  • Electrothermal integration analysis method of pin limiter under the action of high power electromagnetic pulse

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Embodiment Construction

[0017] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0018] 1. Establish the physical model of the PIN diode to be solved, and use the curved hexahedron to dissect the physical model to obtain the structural information of the PIN diode physical model, that is, the number of the hexahedron unit and the physical coordinate value of each node on the hexahedron.

[0019] The physical model of the PIN diode used in the calculation is p + n + 1D device model of the structure with a substrate of n + Silicon material, doped with a donor concentration of 10 19 cm -3 , the doping adopts a Gaussian distribution. An n-type epitaxial layer with a thickness of 10 μm was grown on the substrate, and the doping donor concentration was 10 15 cm -3 . The acceptor impurity diffuses into the epitaxial layer to form a p-region, the impurity distribution is Gaussian, and the concentration at the pn junction (depth is 3 μm) is...

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Abstract

The present invention discloses a PIN limiter electrothermal integration analysis method under a high-power electromagnetic pulse action, and provides internal temperature distribution of a PIN diode in a limiter circuit under the high-power pulse action. According to the method, firstly, a semiconductor drift-expansion equation group is calculated by using a time domain spectral element method, so as to obtain carrier distribution and electric potential distribution inside the PIN diode; next, on the basis of resolving an internal electric field and a current density of a semiconductor, internal temperature distribution of the PIN diode is obtained through calculating by using a heat conduction equation; and finally, a newton iteration form of a circuit equation of the limiter is deduced, the circuit equation, the drift-expansion equation group, and the heat conduction equation are coupled to resolve, and practical voltages of two ends of the PIN diode in the circuit and the internal temperature distribution of the PIN diode are obtained through calculation by using a physical model.

Description

technical field [0001] The invention belongs to the electrothermal integrated analysis of semiconductor devices, in particular to a numerical analysis method designed for a PIN tube limiter. Background technique [0002] High-power electromagnetic pulses refer to electromagnetic pulses with a microwave pulse peak power above 100MW and a frequency in the range of 0.3-300GHz. High-power microwave weapons radiate microwaves generated by high-power microwave sources through high-gain directional antennas to irradiate targets with extremely high intensity, killing personnel and destroying electronic equipment (Tan Xianyu, Technical status and development of new concept weapons of high-power microblog[ J]. Aviation Weapons, 2004, 1:8-11). High-power electromagnetic pulses can burn electrical components or affect the performance of electrical subsystems. There are two main ways of damaging effects of high-power electromagnetic pulses on electronic equipment: (1) Under the action ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F30/20G06F119/08G06F17/12
Inventor 丁大志陈如山樊振宏包华广盛亦军
Owner NANJING UNIV OF SCI & TECH
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