43results about How to "Flexible modeling" patented technology

The invention discloses an electric-heat integrated analysis method for a MESFET under the action of high-power electromagnetic pulses. The method comprises the steps that a drifting-diffusing equation set is solved by taking the electronic quasi Fermi potential, the hole quasi Fermi potential and the electric potential as variables and adopting a time domain spectral-element method to solve the instaneous quasi Fermi potential and electric potential of the metal-semiconductor field effect tube (MESFET) under the action of the high-power pulses, and then the electric field intensity and the current density at the moment are obtained; temperature distribution of all positions at the moment can be obtained under the action of a joule heat source by considering the influences of ambient environment temperature and heat convection; the carrier mobility and the generation-recombination rate are updated according to temperature changes, electric field distribution is recalculated, the steps are repeatedly conducted until the drifting-diffusing equation set meets the convergence precision, and electric field distribution and heat distribution at the moment are to-be-solved electric-heat distribution inside the MESFET at the moment. The method is achieved on the basis of a MESFET physical model, and the distribution conditions, changing along with time, of an electric field and the temperature in a device under the action of the high-power electromagnetic pulses can be clearly obtained.