MOSFET electric heating integrated analysis method under high power electromagnetic pulse effect

An electromagnetic pulse and analysis method technology, applied in the field of electrothermal effect analysis, can solve problems such as waste of time, limitations, and huge amount of calculation, and achieve the effects of flexible modeling, good performance, and convenient segmentation

Active Publication Date: 2016-06-22
NANJING UNIV OF SCI & TECH
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Problems solved by technology

However, due to the Yee grid characteristics of FDTD, it is limited when simulating models with complex structures.
When FEM is applied to the time domain, each time step involves the solution of linear equations, the amount of calculation is very large, and it is a waste of time

Method used

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  • MOSFET electric heating integrated analysis method under high power electromagnetic pulse effect
  • MOSFET electric heating integrated analysis method under high power electromagnetic pulse effect
  • MOSFET electric heating integrated analysis method under high power electromagnetic pulse effect

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Embodiment Construction

[0015] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0016] 1. Derivation of the model equation by the spectral element method

[0017] The coupling method is used to solve the transient drift-diffusion equation, that is, the Poisson equation and the current continuity equation are solved simultaneously, and the carrier concentration n, p and potential as a variable.

[0018] The transient model equations for the MOSFET include:

[0019] Normalized Poisson equation:

[0020] In the Poisson equation of the above formula (5.1.1), Γ is the net doping concentration, ε 1 , ε 2 is the dielectric constant, expressed as:

[0021]

[0022] The normalized electron current density equation:

[0023] The normalized hole current density equation:

[0024] The normalized electron current continuity equation: ∂ n ∂ t ...

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Abstract

The invention discloses an integrated analysis method of MOSFET electrothermal under the action of high-power electromagnetic pulse. This method first uses the time-domain spectral element method to solve the drift-diffusion equations, and obtains the instantaneous carrier concentration and potential distribution of the MOSFET under the action of high-power pulses, and obtains the electric field strength and current density at the current moment. Assuming that the heat source inside the model is only Joule heat source, considering the influence of ambient temperature and thermal convection, the temperature distribution of each point at the current moment is obtained. Electric field parameters such as carrier mobility are updated according to temperature changes. This cycle is repeated until the drift-diffusion equations meet the convergence accuracy, and the electric field distribution and heat distribution at this time are the required electric heat distribution inside the MOSFET at the current moment. This analysis method has extremely important practical significance for researching semiconductor devices such as MOSFET against high power destruction.

Description

technical field [0001] The invention belongs to the transient electrothermal effect analysis of semiconductor devices, in particular to a numerical analysis method for MOSFET design. Background technique [0002] An electromagnetic pulse is a transient electromagnetic phenomenon. After the high-power electromagnetic pulse is injected into the integrated circuit, it will cause electrical breakdown or thermal breakdown of the circuit, and even completely damage the device. Integrated circuits and electronic equipment are mainly composed of semiconductor devices. As the integration level of circuits continues to increase, they are becoming more and more sensitive to strong electromagnetic pulses, especially high-power electromagnetic pulses. Active components in circuits, especially MOSFETs, easily absorb radiated electromagnetic energy and are prone to Affected by electrical stress, the internal current of the device increases sharply, and the temperature rises sharply, resul...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
Inventor 丁大志陈如山樊振宏曹军包华广盛亦军
Owner NANJING UNIV OF SCI & TECH
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