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Electrothermal integrated analysis method of mosfet under the action of high power electromagnetic pulse

An electromagnetic pulse and analysis method technology, which is applied in the field of electrothermal effect analysis, can solve problems such as huge amount of calculation, waste of time, and limitations, and achieve the effects of flexible modeling, convenient subdivision, and good behavior

Active Publication Date: 2018-12-25
NANJING UNIV OF SCI & TECH
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Problems solved by technology

However, due to the Yee grid characteristics of FDTD, it is limited when simulating models with complex structures.
When FEM is applied to the time domain, each time step involves the solution of linear equations, the amount of calculation is very large, and it is a waste of time

Method used

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  • Electrothermal integrated analysis method of mosfet under the action of high power electromagnetic pulse
  • Electrothermal integrated analysis method of mosfet under the action of high power electromagnetic pulse
  • Electrothermal integrated analysis method of mosfet under the action of high power electromagnetic pulse

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Embodiment Construction

[0015] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0016] 1. Derivation of the model equation by the spectral element method

[0017] The coupling method is used to solve the transient drift-diffusion equation, that is, the Poisson equation and the current continuity equation are solved simultaneously, and the carrier concentration n, p and potential as a variable.

[0018] The transient model equations for the MOSFET include:

[0019] Normalized Poisson equation:

[0020] In the Poisson equation of the above formula (5.1.1), Γ is the net doping concentration, ε 1 , ε 2 is the dielectric constant, expressed as:

[0021]

[0022] The normalized electron current density equation:

[0023]

[0024] The normalized hole current density equation:

[0025]

[0026] The normalized electron current continuity equation:

[0027]

[0028] The normalized hole current continuity equation:

[0029] ...

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Abstract

The present invention discloses a MOSFET electric heating integrated analysis method under a high power electromagnetic pulse effect. According to the method, firstly a time-domain spectral element method is used to solve a drift-diffusion equation set, instantaneous carrier density and potential distribution of a MOSFET under a high-power pulse effect is solved, and the electric field strength and current density at the present time are obtained. Assuming that the heat source in the model is only a Joule heat source, the influences of an ambient environment temperature and thermal convection are considered, and the temperature distribution of each point at a preset time is obtained. According to the temperature change, the carrier mobility and other electric field parameters are updated. The above steps are repeated until the drift-diffusion equation set satisfies convergence precision, and the electric field distribution and heat distribution at that time is the electric heating distribution to be solved in the MOSFET at the current time. The analysis method has an important practical significance for researching the high power damage resistance of the MOSFET and other semiconductor devices.

Description

technical field [0001] The invention belongs to the transient electrothermal effect analysis of semiconductor devices, in particular to a numerical analysis method for MOSFET design. Background technique [0002] An electromagnetic pulse is a transient electromagnetic phenomenon. After the high-power electromagnetic pulse is injected into the integrated circuit, it will cause electrical breakdown or thermal breakdown of the circuit, and even completely damage the device. Integrated circuits and electronic equipment are mainly composed of semiconductor devices. As the integration level of circuits continues to increase, they are becoming more and more sensitive to strong electromagnetic pulses, especially high-power electromagnetic pulses. Active components in circuits, especially MOSFETs, easily absorb radiated electromagnetic energy and are prone to Affected by electrical stress, the internal current of the device increases sharply, and the temperature rises sharply, resul...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26
Inventor 丁大志陈如山樊振宏曹军包华广盛亦军
Owner NANJING UNIV OF SCI & TECH
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