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Nonvolatile storage with automated response to program faults

A programming failure, memory technology, applied in information storage, static memory, memory systems, etc., can solve problems such as time-consuming

Active Publication Date: 2016-12-07
SANDISK TECH LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This processing requires more burden of managing data of multiple blocks, and also consumes time

Method used

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  • Nonvolatile storage with automated response to program faults
  • Nonvolatile storage with automated response to program faults
  • Nonvolatile storage with automated response to program faults

Examples

Experimental program
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Embodiment Construction

[0032] A non-volatile memory system that recovers from programming errors in a more efficient manner is proposed. If an error occurs during programming, the programming process can automatically proceed to the next available word line, page or other unit within the same block (or other unit of storage) without the need to retransmit data, addresses or commands.

[0033] One example system includes a controller and one or more memory dies in communication with the controller. The controller sends data and a starting address to one of the memory dies along with a request to program the data. The memory die includes a plurality of non-volatile storage elements and one or more control circuits. One or more control circuits attempt to program data to the non-volatile storage element at the starting address and determine that programming of the data at the starting address failed. The one or more control circuits automatically identify a new address in the memory die without the m...

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Abstract

A non-volatile storage system comprises a controller and one or more memory die in communication with the controller. The controller sends data and an initial address in conjunction with a request to program the data to one of the memory die. The memory die comprises a plurality of non-volatile storage elements and one or more control circuits. The one or more control circuits attempt to program the data to the non-volatile storage elements at the initial address and determine that programming of the data at the initial address fails. The one or more managing circuits automatically identify a new address in the memory die without the memory die being instructed of the new address by the controller and program the data at the new address on the memory die without the data being re-transmitted from the controller to the memory die.

Description

technical field [0001] The present application relates to a non-volatile memory device that responds automatically to programming failures. Background technique [0002] Semiconductor memory devices are becoming increasingly commonly used in various electronic devices. For example, non-volatile semiconductor memory is used in cellular phones, digital cameras, personal digital assistants, mobile computing devices, non-mobile computing devices, servers, and other devices. Electrically Erasable Programmable Read-Only Memory (EEPROM) and flash memory are among the most common non-volatile semiconductor memories. [0003] Certain EEPROMs and flash memories utilize floating gates that are located above and insulated from a channel region in a semiconductor substrate. The floating gate is located between the source region and the drain region. The control gate is disposed over and insulated from the floating gate. The threshold voltage of a transistor is controlled by the amoun...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/10G11C16/34
CPCG11C16/10G11C16/3454G11C11/5628G11C16/3459G11C16/3418G11C29/42G11C29/4401G11C29/765G11C2029/0409G11C2029/4402G06F2212/7201G11C29/76G11C16/08G11C16/102G11C29/08G06F12/0238
Inventor 阿迪蒂亚·普拉塔普·夏尔马N·伯拉希瓦·库马尔维马尔·库马尔·贾殷
Owner SANDISK TECH LLC