Substrate temperature monitoring device, dry etching equipment and substrate temperature monitoring method

Abstract

The invention provides a substrate temperature monitoring device, dry etching equipment and a substrate temperature monitoring method, and relates to the technical field of dry etching, in order to relieve or avoid the Mladic phenomenon caused by temperature difference in different areas on a substrate, and prevent the reduction of the working efficiency and unnecessary wastes of the production cost. The substrate temperature monitoring device comprises: a temperature sensing module mounted in an etching chamber of the etching equipment and used for sensing temperatures of various areas on a substrate in the etching chamber in an etching process; and a difference calculation module connected with the temperature sensing module and used for calculating temperature differences of contact areas and peripheral noncontact areas on the substrate according to the temperatures of the areas on the substrate sensed by the temperature sensing module. The substrate temperature monitoring device is used for monitoring the temperature distribution condition of the substrate in the etching process in real time.

Description

technical field [0001] The invention relates to the technical field of dry etching, in particular to a substrate temperature monitoring device, dry etching equipment and a substrate temperature monitoring method. Background technique [0002] Dry etching (Dry Etch) process is an indispensable process in the field of TFT-LCD (Thin Film Transistor Liquid Crystal Display, Thin Film Transistor Liquid Crystal Display), the main function of dry etching process is to remove a part of the film on the substrate, in order to The desired pattern is formed in the film. The dry etching equipment used in the dry etching process mainly includes: an etching chamber, such as figure 1 As shown, the lower part of the etching chamber is provided with a base 4 for placing the substrate 2, the upper surface of the base 4 has a plurality of protruding lower electrodes 1, and the upper part of the etching chamber is provided with an upper electrode. During etching, the substrate 2 is placed on th...

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Problems solved by technology

[0003] There are following problems in the above-mentioned dry etching process: figure 2 As shown, the surface of the top of the lower electrode 1 is rough and uneven when it is first used. At this time, the top of the lower electrode 1 is in point contact with the substrate 2. The thermal conductivity of the top of the lower electrode 1 is average, and the heat loss on the substrate 2 is relatively low. Therefore, the temperature difference between the area corresponding to the top of the lower electrode 1 on the substrate 2 (hereinafter referred to as the contact area) and the surrounding area not corresponding to the top of the lower electrode 1 (hereinafter referred to as the non-contact area) is not much different.

Although this countermeasure can alleviate the above-mentioned Mla phenomenon to a certain extent, due to the different characteristics of different products and the different stability of the production line process, it is not easy to grasp the time to clean or replace the lower electrode. If the replacement cycle is short, it will cause a decrease in work efficiency and unnecessary waste of production costs, and if the cleaning or replacement cycle is long, the above-mentioned Mura phenomenon cannot be effectively alleviated.

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