A kind of reverse conduction igbt

Abstract

The invention belongs to the technical field of power semiconductor devices, and relates to a reverse conduction IGBT. The technical proposal of the reverse conduction IGBT of the present invention is: forming P-type regions on the surface of the N-type high-resistance semiconductor material, and forming N-type emitter regions and P-type body contact regions side by side and alternately on the surface of the P-type regions. In the middle of the N-type emitter region, a dielectric groove that runs through the P-type region and is in contact with the N-type high-resistance semiconductor at the bottom is formed, and the gate electrode is drawn out from the conductive material in the dielectric groove to form a groove gate structure; the N-type emitter region and the P-type The common terminal of the body contact area is the emitter electrode. On the back of the N-type high-resistance semiconductor material, a collector region is formed by continuously alternating N-type regions and P-type regions, and the common lead-out end of the N-type and P-type regions is a collector. The top of the collector region introduces an electric field stop region, and there is a distance between the electric field stop region and the collector region in the longitudinal direction of the device, and the electric field stop region consists of heavily doped N-type regions and lightly doped Mixed P-type region composition.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and relates to a reverse conduction type IGBT (insulated gate bipolar transistor). Background technique [0002] The reverse conduction IGBT was first proposed by Hideki Takahashi in the document "1200V Reverse Conducting IGBT" (04'ISPSD). figure 1 shown). The advantage of the reverse conduction IGBT is that it can effectively avoid the parasitic effect of the traditional IGBT and diode in the packaging process, and reduce the manufacturing cost. The general practice of reverse conduction IGBT is to replace part of the P-type collector area of ​​the traditional IGBT with the N-type collector area, as shown in the attached manual figure 2 shown. For the manual attached figure 2 In the reverse conduction IGBT shown, in the early stage of forward conduction of the device, the current flowing through the drift region is the electron current, and the electron current is colle...

AI Technical Summary

Problems solved by technology

Due to the conversion from MOSFET mode to IGBT mode, the output characteristic curve of the traditional reverse conduction IGBT has a negative resistance effect (also known as voltage bounce phenomenon), as shown in the attached manual image 3 shown

Images