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A kind of soi-ligbt device and preparation method thereof

A device and the technology of the first oxide layer, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as reliability reduction and power consumption increase, and achieve breakthrough voltage improvement and elimination of negative resistance effects. Effect

Active Publication Date: 2020-01-21
NANJING UNIV OF POSTS & TELECOMM
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, for SA-LIGBT, the anode N+ region used to improve the turn-off characteristics brings a negative resistance effect while increasing the turn-off speed, and the negative resistance effect will reduce the linearity, reliability and power consumption of the device. promote

Method used

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  • A kind of soi-ligbt device and preparation method thereof
  • A kind of soi-ligbt device and preparation method thereof

Examples

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Embodiment 1

[0028] This embodiment provides an SOI-LIGBT device, the cell structure of which is as follows figure 2 As shown, its cell structure includes a silicon substrate 1, a buried oxide layer 2 located on the silicon substrate 1, a P well 3 located on the buried oxide layer 2, and a P body region 14 located adjacent to the P well 3. , N-type drift region 10, P body region 2 16 and first oxide layer 9;

[0029] The P body region 14 is arranged on the top side of the P well 3, the cathode heavily doped P+ region 5 and the cathode heavily doped N+ region 7 are arranged in the P body region 14 independently of each other, and the cathode heavily doped P+ region 5 and The heavily doped N+ regions 7 of the cathode are all in contact with the cathode 6;

[0030] The P body region 216 is arranged on the other side of the top of the P well 3, and the anode heavily doped N+ region 15 is arranged in the P body region 216 and is located on the top side thereof;

[0031] The N-type drift regi...

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Abstract

The present invention provides a novel lateral insulated gate bipolar transistor (AWIL‑LIGBT) based on silicon-on-insulator (SOI) using an anode weak inversion layer (AWIL-LIGBT) and its preparation method. The anode weak inversion structure is used to eliminate the negative resistance effect . Compared with the conventional SA-LIGBT, the anode of the present invention has one more grid plate and a P body region 2. Due to the high resistance formed by the inversion, the holes in the anode P+ can be injected into the drift region faster, thereby eliminating negative resistance effect. Compared with the ordinary SA-LIGBT, the present invention eliminates the negative resistance effect that occurs during the conduction process of the anode short-circuit LIGBT (SA-LIGBT) under the condition that the turn-off speed remains unchanged and the breakdown voltage is increased.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, and in particular relates to a novel SOI-LIGBT semiconductor power device based on a weak anode inversion layer to eliminate negative resistance effect and a preparation method thereof. Background technique [0002] Lateral Insulated Gate Bipolar Transistor (LIGBT) has attracted extensive attention and developed rapidly due to its large drive current, high input impedance of MOS gate control, and low on-state voltage drop. Among them, the anode short-circuit LIGBT (SA-LIGBT) has become a hot spot in recent years due to its good turn-off characteristics because it solves the tailing time during turn-off. However, for SA-LIGBT, the anode N+ region used to improve the turn-off characteristic brings a negative resistance effect while improving the turn-off speed, and the negative resistance effect will reduce the linearity, reliability and power consumption of the device. promote...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L29/739H01L21/331
CPCH01L29/0623H01L29/66325H01L29/7394
Inventor 周骏成建兵袁晴雯
Owner NANJING UNIV OF POSTS & TELECOMM
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